Emitter-base breakdown voltage 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 发射极 - 基极击穿电压
emitter base breakdown/ B2560J Bipolar transistorsThe emitter-base breakdown voltage for double diffused planar transistors has been examined both theoretically and experimentally. A convenient chart is given for the calculation of the breakdown voltage for a wide range of transistors structures....
Breakdown Voltage Analysis in Quaternary InAlGaN High Electron Mobility Transistor of High-K Passivation Layer for High Power Applications The 2-Dimensional breakdown characteristics analysis in InAlGaN/GaN high electron mobility transistors (HEMTs) is implemented through including of donor an... P Anand...
Collector to Emitter Breakdown Voltage 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 集电极到发射极击穿电压...
英语翻译collector-emitteremitter-collectorbreakdown voltage collector-emitter 答案 试译:集电极--发射极发射极--集电极集电极--发射极击穿电压. 结果二 题目 英语翻译 collector-emitter emitter-collector breakdown voltage collector-emitter 答案 试译: 集电极--发射极 发射极--集电极 集电极--发射极击穿电压. 相关...
Voltage - Collector Emitter Breakdown (Max) standard Vce Saturation (Max) @ Ib, Ic standard Current - Collector Cutoff (Max) None DC Current Gain (hFE) (Min) @ Ic, Vce None Power - Max None Frequency - Transition None Operating Temperature standard Mounting Type TO220 Resistor - Base (R1...
题目 举报 英语翻译collector-emitteremitter-collectorbreakdown voltage collector-emitter 扫码下载作业帮搜索答疑一搜即得 答案解析 查看更多优质解析 解答一 举报 试译:集电极--发射极发射极--集电极集电极--发射极击穿电压. 解析看不懂?免费查看同类题视频解析查看解答 ...
Voltage - Breakdown (V(BR)GSS) Standard Current - Drain (Idss) @ Vds (Vgs=0) Standard Current Drain (Id) - Max Standard Voltage - Cutoff (VGS off) @ Id Standard Resistance - RDS(On) Standard Voltage Standard Voltage - Output Standard Voltage - Offset (Vt) Standard Current - Gate ...
high collector-emitter breakdown voltage that exist in conventional bipolar power transistors (BPTs), a new bipolar power transistor called the trench base-... Chen, Q.,Sin, J.K.O.,Institute of Electric and Electronic Engineer - Power Semiconductor Devices and ICs, 1998. ISPSD 98: Proceedings...
High Voltage Capability: This MOSFET features a maximum collector emitter breakdown voltage of 650V, making it suitable for high voltage applications such as LED driver power, UPS, and BMS systems. High Current Handling: With a current rating of 12A, this MOSFET can handle demanding power require...