Integrated short circuit (J SC ) from measurements of external quantum efficiency (EQE) of currents showed a 65% increase in sub-band collection in the GaAs sub-cell when the number of QD layers increased from 10 to 20. IMM cells with QD's embedded in the middle cell showed minimal loss...
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A1. Multiple quantum wellsA1. Optical propertiesA3. Epitaxial lateral overgrowthB1. InGaNEpitaxial lateral overgrowth of gallium nitride with ( 1 1 2 2 ) facets was realized by metal organic chemical vapor deposition on GaN/sapphire (0 0 0 1) substrates with SiO 2 stripe mask. After wet ...