MobilityRaman spectroscopyLaser annealingTransmission electron microscopyThe lack of bandgap is a fundamental issue in graphene devices, which can be solved by fabricating reduced graphene oxide (rGO). However, its device integration is impeded by the elevated reduction temperature (>2000 K) requirements...
High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide (Nat. Electron., 2021, DOI:10.1038/s41928-021-00657-y) 文献链接:
predicted that a sheet of sp-sp2 hybridized carbons, as flat as γ-graphyne, should have greater carrier mobility (both electrons and holes) than a graphene sheet [24], [25]. Taking into account the semiconductor nature of γ-graphyne (γG) as well as its promising transport properties [...
The electronic structure of graphene causes its charge carriers to behave like relativistic particles. For a perfect graphene sheet free from impurities and disorder, the Fermi energy lies at the so-called ‘Dirac point’, where the density of electronic
Twitter Google Share on Facebook electron number [i′lek‚trän ‚nəm·bər] (atomic physics) The number of electrons in an ion or atom. McGraw-Hill Dictionary of Scientific & Technical Terms, 6E, Copyright © 2003 by The McGraw-Hill Companies, Inc. ...
Electron drift velocity and mobility in graphene 电子速度活动性飘移BOLTZMANN电子温度平衡方程电子密度调查结果摘要:vip物理学前沿:英文版
High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide Article 22 October 2021 Ultrafast hot carrier transfer in WS2/graphene large area heterostructures Article Open access 28 March 2022 Spatially mapping thermal transport in graphene by an opto-thermal method Article...
1.Ohtomo A & Hwang HY (2004) A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface.Nature427(6973):423-426. 2.Dean CR, et al.(2010) Boron nitride substrates for high-quality graphene electronics. 5(10):722. 3.Wang L, et al.(2013) One-dimensional electrical contact to ...
As one material belonging to this category, InSe, a III–VI semiconductor, not only is a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon ...
of graphene-on-boron-nitride superlattices over a wide range of temperature and carrier density. The umklapp processes cause giant excess resistivity that rapidly increases with increasing superlattice period and are responsible for deterioration of the room-temperature mobility by more than an order of...