The enhanced device performance is primarily attributed to a higher electron mobility in the highly strained Si NWs.doi:10.1016/j.sse.2014.12.015Luong, G. VForschungszentrum JulichKnoll, LForschungszentrum JulichBlaeser, SForschungszentrum JulichSueess, M. J...
Electron mobility (µe) is a physical quantity in solid-state physics, which is the directional drift velocity of an electron per unit external electric field. From: Solution-Processed Organic Light-emitting Devices, 2024 About this pageSet alert ...
The conduction electrons, corresponding to dxy orbitals, are closer to the interface, exhibiting lower electron mobility compared to the mobility for dxz/yz orbitals, which extend deeper into the STO. d The reflection high-energy electron diffraction (RHEED) intensity as a function of time, ...
Previous works have modelled charged traps as negative electron chargese−directly at the Si/SiO2interface28. However, factors such as the positive correlation between the SiO2thickness with charge mobility in Hall bar devices17,51, and measured large Dingle ratio16are possible signs that these cha...
the lithiation on Si {111} facets,57and it explained the orientation-dependent Li mobility in Si. Wanget al.58studied the lithiation mechanism of amorphous SnO2nanowires and observed a simultaneous partitioning and coarsening characteristic of LixSn as a result of Sn and Li diffusion. Zhuet al...
et al. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 97, 011101 (2005). Article ADS Google Scholar Schlom, D. G. et al. Strain tuning of ferroelectric thin films. Annual Review of Materials Research 37, 589–626...
One can find many strategies explored to achieve good thermal stability, higher mobility, low temperature processability and low trap density in single junction perovskite solar cells. Little has been researched in tandem cells, however the results obtained in single junction have been utilized in ...
To maintain the stability of particle yet the mobility of the surface material, the absorbed energy of each particle must heat the polymer particle above its Tg but below its Tm. However, to avoid crystallization shrinkage during cooling, the temperature of the particle must be maintained above ...
10. A high electron mobility transistor (HEMT), comprising: a semiconductor structure of claim 1; a gate electrode, disposed on the doped compound semiconductor layer; a source electrode and a drain electrode, disposed on two sides of the gate electrode respectively; and a passivation layer, cov...
A high electron mobility transistor includes a set of electrodes, such as a source, a drain, a top gate, and a side gate, and includes a semiconductor structure having a fin extendi