The overall structure is fairly similar to that of a voltage-gated ion channel, but there are several structural features unique to TRP channels. In the second paper, Erhu Cao et al. present the structures of rat TRPV1 in the presence of a peptide neurotoxin (resiniferatoxin) and in the ...
In actual transistor structures, the gated and ungated plasmons become coupled and can interact with each other. In particular, the ungated plasmons excited as a result of the gated-plasmon scattering at the ends of the gated region of the channel (the so called plasmon-plasmon intermode ...
Ion channels are gated by transducing a variety of physical stimuli into structural rearrangements. The presence of significant conformational changes in intracellular regions of voltage-dependent potassium channels has been supported by extensive functional evidence. To better understand the gating ...
Structure of a CLC-family ion channel Some CLC proteins are channels that conduct chloride (Cl−) ions passively, whereas others are active co-transporters that exchange two Cl− ions for one H+. This functional difference has been hard to understand given their high degree of sequence homol...
We present the results of the band structure calculations for a gated AlGaN/GaN heterostructure with undoped AlGaN layer and a lightly doped p-type GaN lay... MS Shur,AD Bykhovski,R Gaska - Solid-State Electronics 被引量: 56发表: 2000年 Comparison of N-face and Ga-face AlGaN/GaN-Based...
Structures of the calcium-activated, non-selective cation channel TRPM4 Article Nature 06 December 2017 Editorial Summary Scoping out TRPM channels Melastatin-related transient receptor potential (TRPM) ion channels are the largest group of the TRP superfamily and, as such, are widespread through...
Calcium ions enter the dendrites through voltage-gated channels in a membrane, and this leads to rapid local modulations of calcium concentration within the dendritic tree [8]. Based on the brain analogy, the binary state could be realized by a single ion that can be moved to one of two ...
The fabrication of back-gated high electron mobility transistors — a novel approach using MBE regrowth on an in situ ion beam patterned epilayer The authors present a new method for the fabrication of GaAs/AlGaAs back-gated high electron mobility transistors (HEMTs) involving MBE regrowth on an...
Structure of tetrameric forms of the serotonin-gated 5-HT3A receptor ion channel Bianca Introini Wenqiang Cui Mikhail Kudryashev The EMBO Journal (2024) Structural insights into the activation mechanism of antimicrobial GBP1 Marius Weismehl Xiaofeng Chu Oliver Daumke The EMBO Journal (2024)...
et al. Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays. Nat. Mater. 11, 301–305 (2012). 22. Ahn, S.-E. et al. Metal oxide thin film photo transistor for remote touch interactive display. Adv. Mater. 24, 2631–...