We show that the diffusion coefficient in very thin films is half of the one found in crystals. This result is in good agreement with the experimental results particularly for aluminum. In our numerical calculations, the parameters of metal structure are fitted to obtain the formula for the ...
whereqis the elemental charge,σe-TEis the electrical conductivity of the IE conductor,Dis the diffusion coefficient of the ion,CandSTare the ion concentration and the Soret coefficient, respectively. The subscript “ + ” or “ − ” denotes the ion species. Fig. 1 aSchematic diagr...
In silicon, the diffusion coefficients of electrons and holes (10−30 cm2/s are at least one order of magnitude larger than that of thermal diffusivity (<0.8 cm2/s) at room temperature. One can focus on the thermal transport alone by studying the signal at times sufficiently larger...
in the Drude formula, the scattering rate\(\gamma\)is evaluated near the Fermi level, because that is where both initial and final states of scattered carriers reside when the photon energy is small. At low temperatures
In this equation, jdiff is the limiting current density in amperes per centimeter squared, n is the number of charge carriers involved in the reaction, D is the diffusion coefficient (in meters squared per second), and c is the concentration (in moles per liter) of the rate-limiting species...
Galvanostatic intermittent titration technique (GITT) was used to study the kinetics of reactions (Supplementary Fig.17, see method for details). The quasi-equilibrium potentials are about 1.18 V for I−/I2and about 1.71 V for I2/ICl oxidation, respectively. The diffusion coefficient yiel...
From self-consistent determination of the dynamical diffusion coefficient, the Fermi energy dependence of the localization length, ξ(E), is obtained for t... Ono,Yoshiyuki - 《Journal of the Physical Society of Japan》 被引量: 130发表: 1982年 Strong localization of electrons in quasi-one-dime...
–Diffusion Effects in Semiconductor Film The self-consistent spatial redistribution of defects leads to the occurrence of nonuni- form deformation, which is caused both by the mismatch of lattice parameters of the epitaxial layer and the substrate, and by the defects themselves (see Formula (19)...
The formula 8.12 predicted the log kET - ΔGo relationships depending on the relative magnitudes of λ and ΔGo (Fig.X): (1) λ > ΔGo, when log k increases if ΔGo decreases (normal Marcus region); (2) λ = ΔGo, the reaction becomes barrierless; and (3) λ < ΔGo, when ...
disordered NbN films, which are characterized by a low diffusion coefficient (D ≈ 0.5 cм2/c), high critical temperature (Tc≈ 10 К), small width of the superconducting transition (∆Tc < 0.2 К), the strong temperature dependence of the resistance in the region of the ...