Impact Factor:4.221 SCIMAGO SJR:1.397 SCIMAGO H-index:144 Research Ranking(Computer Science)465 Journal Information ISSN:0741-3106 Publisher: Periodicity:Monthly Editors-in-Chief: Journal & Submission Website:http://eds.ieee.org/edl.html
About Ieee Electron Device Letters This publication publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconduc...
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect ...
documents published in that journal. The chart shows the evolution of the average number of times documents published in a journal in the past two, three and four years have been cited in the current year. The two years line is equivalent to journal impact factor ™ (Thomson Reuters) ...
device containing a UV-transmitting lens coupled to a UV-sensitive charge-coupled device (CCD) and image monitor enables the real-time imaging of theUV lightportion of theCherenkov radiationin the presence of normal room lighting (Attaset al.,1990,1992, andAttas and Abushady, 1997;Kuribara, ...
A lens is used to image the spatial distribution in an intermediate plane between the foil and the collecting mirror onto an absolutely calibrated 16-bit CCD (charged-coupled device) camera. An interference filter in front of the camera transmits a λ = 10 nm (FWHM) spectral band, centred ...
and biodegradable 3d protein-based nanorobots for the target delivery of therapeutic payloads. The nanofishes are functionalized to include three important features within one single device. For device propulsion, two enzymes of glucose oxidase (GOX, glucose → H2O2) and catalase (CAT, H2O2→O2...
Finally, we briefly address the physical phenomena and device applications that are specific to ultraclean high-mobility graphene. View chapterExplore book Electrical Resistivity under Pressure R. Hauser, in Encyclopedia of Materials: Science and Technology, 2001 1.1 Resistivity Under Pressure in Normal ...
A device with 75nm-long gate and 25nm nanowire width achieved subthreshold swings (SSs) as low as 66mV/decade and 61mV/decade at drain biases of 0.5V and 0.05V, respectively. The drain-induced barrier lowering (DIBL) was 65mV/V with drain current density of 1μA/μm, with the gate...
A device and method for relativistic electron beam heating of a high-density plasma in a small localized region. A relativistic electron beam generator or accelerator produces a high-voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within...