The electronic structure of the cuprate superconductors Bi(2)Sr(2)CaCu(2)O(8) and Bi(2)Sr(2)CuO(6) and the bismuthate superconductor Ba(0.6)K(0.4)BiO(3), as well as semiconducting Ba(0.9)K(0.1)BiO(3), have been studied by electron spectroscopy techniques. The intention has be...
This is a property of all scintillation crystal phosphors, and NaI(TI) and bismuth germanate (Bi4Ge3O12, abbreviated BGO) display this property to a minimal degree. The high density and atomic number of BGO give it a greater stopping power than NaI(TI) for electromagnetic radiation. This ...
bismuth nanosheetcopper alloyingCO_(2)electroreductionZn-CO_(2)batteriesRegulating the electronic structure of Bi-based materials by alloying engineering is ... W Wu,J Zhu,Y Tong,... - 《Nano Research》 被引量: 0发表: 2024年 Lewis Acid Mediated Alteration of Electron Density on a Copper Sit...
To explore the impact of metal oxide ETLs onnip-type TPSCs, our study focused on the widely used FTO/TiO2/Sn-based perovskite/PTAA/Ag configuration. The TiO2ETL was deposited onto the FTO substrate using a titanium butoxide solution and subsequently annealed at 450 °C. The Sn-based perovs...
The narrow ranges reported for some minerals probably reflect a small number of measurements rather than a more exact value for the resistivity. Table 10.2. Resistivities of semiconducting minerals Sulfides Argentite, Ag2 1.5 to 2.0 × 10−3 ohm-m. Bismuthinite, Bi2S2 3 to 570 Bornite, ...
Whereas Raman spectroscopy only probes near-zero momentum phonons at the BZ centre due to the low momentum of visible-light photons, vibrational EELS in our configuration probes phonons of all momenta, thus producing the discrepancy between our results and those in Raman literature (see detailed ...
If the emitter 12 is made of strontium tantalate bismuthate (SrBi2Ta2O9), then its polarization inversion fatigue is small. Materials whose polarization inversion fatigue is small are laminar ferroelectric compounds and expressed by the general formula of (BiO2)2+ (Am−1BmO3m+1)2−. Ions ...
An HREM study on Bi[sub 3.25]La[sub 0.75]Ti[sub 3]O[sub 12] further confirms that this surface configuration arises from some intergrowth defects with a thickness of 5 nm appearing on the crystal edge, which is also observed in compounds with χ = 1.0 and 2.0, but not in the poor ...
the ground state of Ta2NiSe5should have a significant contribution from ad9Lconfiguration of Ni2+[the valence state of tantalum is Ta4+(5d1)], whereLdenotes a hole in the Se 4porbital9. Further, NiS2−xSexis known as a bandwidth-control metal–insulator transition system, where the ...
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