2*, Jonghoon Lee 1,3, Sabyasachi Ganguli 1 & Ajit K. Roy 1* The resistive switching behavior in Ta2O5 based memristors is largely controlled by the formation and annihilation of cond
Additionally, Hf atoms favor a sevenfold coordination as in m-phase HfO2, but the charged oxygen vacancies introduced by Al trivalent cations doping in HfO2 leads to the sevenfold coordination of Hf atoms around defect sites, thereby stabilizing t-phase HfO2 [20]. Download: Download high-res ...