The numerical results are used to study the influence of trimming on the power density distribution and the noise performance.doi:10.1108/eb044192Casselman, G.De Mey, G.Microelectronics InternationalG. Casselman and G. De Mey "Influence of trimming on the electric field distribution in thick ...
A 5-;m-thick film was prepared using chemical solution deposition (CSD). Square and triangle waveforms and various frequencies of unipolar or bipolar electric fields were applied to the film. The effects of applied field switching cycles on the ferroelectric properties and longitudinal displacements ...
the gate leakage by five orders of magnitude (Mollah et al., 2019). These results show the potential of high-k dielectrics to mitigate the effects of bothE-field nonuniformity and gate tunneling currents, and enable device scaling that helps minimize the deleterious impact of high sheet ...
thickness predominated by PTA nanosheets was observed by atomic force microscopy (AFM), and ~3 nm corresponds to two layers (Fig.1d). As shown in Fig.1e, the thickness refers to the length of the PTA molecule, indicating that a 1.5 nm-thick sheet is composed of PTA molecules viaπ...
To achieve this condition, we positioned a sheet of 15-μm-thick Al foil in front of the ZnTe’s front surface at a distance of 5, 15 or 25 mm. We created a 1-mm-diameter hole on the Al foil to let the probe laser pass through without any interaction, and the electron beam ...
The key to the discovery, published in theProceedings of the National Academy of Sciences, uses thintwo-dimensional materialsas thebuilding blocksof the electrode, stacking them to create thickness and then using a magnetic field to manipulate their orientations. The research team used commercially ...
(ERW), a method that does not usewelding consumables. An AC electric current is used to heat the adjacent faces over the pipe. Subsequently, the two faces of the sheet are pressed together to produce the longitudinal weld. In the traditional form of ERW fabrication process, the frequency of...
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Full Turn-Key provider including site acquisition, engineering services, manufacturing, field services-DAS, tech services, value added reseller and monitoring, maintenance and network ownership Specialize in developing supplying and building wireless and wired networks and in-building te...
Tbuhreiepd-tyopxiedSei(sBuObsXtr)altaey(ebr.oTrohne-fdroopnetgda,tNe Aa ≈nd 1t ×he 1b0a16c ckmga−t3e) is used provide as a backgate through control of the electric a 150-nm-thick field within the Si channel. The top silicon layer was uniformly doped with P-...