The values of relative resistance drift (ΔR/R 0) are in the range of 0.58–0.78% and have a minimum at 1300°C after aging test at 125°C for 600h. The Zn0.2Fe1.05NiMn0.75O4 ceramic materials are desirable for high stability thermistor applications....
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Participates in the simulation power source design, the digital circuit design, the software compilation.Researched and developed the use semiconductor refrigeration technology cold pitfall to carry on to the milk type decreases temperature rapidly, and using the ultrasonic wave cavitation effect pr ...
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Effect of heat-treatment under oxygen atmosphere on the electrical properties of BaTiO 3 thermistordoi:10.1016/S0167-9317(02)01018-3OxygenatmosphereHeat-treatmentPTCRthermistorPTCR thermistors, which have a lower room temperature resistance than nominal ones, are annealed under oxygen atmosphere (oxygen...
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At a given content of BaBi2Nb2O9, the influence of sintering temperature on the electrical properties of samples has been investigated. A minimum of room temperature resistivity is obtained at the sintering temperature eq 展开 DOI: 10.1007/s10854-006-9108-1 年份: ...
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