In the absence of a series resistor, the current/voltage characteristic exhibits threshold, negative resistance and memory and the current is time-dependent.doi:10.1080/00207218508920750BEYNON, J.Li, J.Taylor & Francis GroupInternational Journal of Electronics...
This article presents an analytical study of a new power metal-oxide semiconductor field-effect transistor (MOSFET) structure, called 'FLoating Islands MOSFET (FLIMOSFET)', which presents a better trade-off between breakdown voltage and on-resistance compared with conventional VDMOSFETs. The improvemen...
The effects of very-high resistance grounding on the selectivity of ground-fault relaying in high-voltage longwall power systems Thomas Novak.The effects of very-high-resistance grounding on the selectivity of ground-fault relaying in high-voltage longwall power systems.IEEE ... T Novak - Industry...
抗氧剂在PP中的并用效应 THE COMBINATION EFFECT AND MECHANISM OF HALS WITH ANTIOXIDANTS ON THE RADIATION RESISTANCE OF PP Ⅰ. THE COMBINATION EFFECT OF HALS WITH ANTIOXIDANTS ON THE RADIATION RESISTANCE OF PP 热度: Effect of the Moonpool on the Total Resistance of a Drillship ...
a pair of matched field effect transistors, a pair of matched current amplifying transistors controlled by the field effect transistors, and a capacitor to be charged by one of the current amplifying transistors to a voltage corresponding to that of an input of one of the field effect ...
A disadvantage of present field-effect transistors is the higher conduction voltage drop when compared with a bipolar transistor of the same current rating. The value of “on” resistance is a function of the drain-source voltage rating of the device. Higher-voltage devices have higher on resist...
5.9B) or the surface resistance on either tension or compression sides (Fig. 5.9A). Fig. 6.25A shows the oblique resistance increasing reversibly due to strain and increases irreversibly due to damage. Damage becomes more severe as the flexural strain increases, as shown in the third cycle in...
The calibration device 16 of an ohmmeter 10 is compensated to eliminate any error which may result from the inherent resistance of the conductors 30, 32 co... EL Edward,LE Eccleston 被引量: 0发表: 1989年 REPRESENTATION OF ELECTRIC SHIELDS AND SHORTED TURNS OF FINITE RESISTANCE ON THE AXIALLY...
Impact of rapid thermal annealing temperature on non-metallised polycrystalline silicon thin-film diodes on glass Optimum rapid thermal annealing temperature is around 1000°C. Highest open-circuit voltage (471mV) corresponds to lowest sheet resistance. Obtained acti... H Hidayat,A Kumar,F Law,......
Inside resistance RM (ohm) [(VC-0.5)/IS*0.001]-RS Supply voltage VC(V) +5.0 ±5% Accuracy XG(%) @IPN,T=25°C < ±0.5 Offset current IOE(mA) @IP=0,T=25°C < +0.2 Temperature variation of IOE IOT(mA/°C) @IP=0,-40 ~ +85°C < ±0.5 Linea...