Multiple direct-write EEPROM cells are disposed within each elongated trench such that each EEPROM cell shares a recall gate (RG) and a program gate (PG) with another cell in the same trench. Preferably, a silicon rich dielectric (43) (such as silicon rich oxide or silicon rich nitride) ...
d EEPROM suppliers. Directory for top-ranked EEPROM suppliers.Directory for top-ranked EEPROM suppliers.Presents a directory for top-ranked EEPROM suppliers in the United States. Atmel Corp.; Fairchild Semiconductor Corp.; Infineon Technologies Corp....
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A Channel-Erasing 1.8V Only 32Mb NOR Flash EEPROM with a Bit-Line Direct-Sensing SchemeingentaconnectDigest of Technical Papers of the Solid State Circuits Conference
Xicor unveils EEpROM development system.Xicor unveils EEpROM development system.Reports on Xicor Inc.'s XK84 EISA add-in card, a personal computer-based development system for embedding EEpROM into microprocessors and microcontrollers. Capabilities; Specifications; Support; Compatibility; Pricing; Availabilit...
An EEPROM cell which is programmed to a 1 or .0. binary state regardless of the prior state of the cell, that is, without erasing. The cell construction includes silicon nitride capacitors between the floating gate and the programming electrodes which enhances the programming characteristics and ...
Evaluation of ion implantation charging by using \\{EEPROM\\}doi:10.1016/0168-583X(93)95066-EIon implantation charging has been studied by evaluation of the threshold voltage shift (螖Vt) of \\{EEPROM\\} devices. The threshold voltage shifted proportionally with the variation of the electron ...
The control bits provide direct external control of the EEPROM. Inputs-outputs (P1-P5) provide communication to the EEPROM via the CPU.MATSUBARA TOSHIYUKI
PURPOSE: To manufacture an integrated circuit with the maximum circuit density by providing at least two vertical type direct writing EEPROM cells, that are paired each in at least one control gate in a trench that is formed in a semiconductor substrate.BERTIN CLAUDE L...
Multiple direct-write EEPROM cells are disposed within each elongated trench such that each EEPROM cell shares a recall gate (RG) and a program gate (PG) with another cell in the same trench. Preferably, a silicon rich dielectric (43) (such as silicon rich oxide or silicon rich nitride) ...