Multiple direct-write EEPROM cells are disposed within each elongated trench such that each EEPROM cell shares a recall gate (RG) and a program gate (PG) with another cell in the same trench. Preferably, a silicon rich dielectric (43) (such as silicon rich oxide or silicon rich nitride) ...
Rotary encoders, fully debounced switches, EEPROM support on Arduino and mbed - direct and over I2C - TcMenu/IoAbstraction
A 1.8 V-only 32 Mb NOR flash EEPROM uses a channel-erasing scheme for the 0.49 /spl mu/m/sup 2/ cell in 0.25 /spl mu/m CMOS technology. The block decoder circuit with an erase-reset sequence performs channel-erase. The bit line direct sense permits sub-1.8 V operation, suitable for...
Direct flash memory access, round robin virtual pages and EEPROM like memory. - d00616/arduino-NVM
Rohm BR9080 121Kb / 11P 8k, 16k bit EEPROMs for direct connection to serial ports BR9010-W 277Kb / 15P 1k, 2k, 4k, bit EEPROMs for direct connection to serial ports Rev.A BR9010 187Kb / 17P 1, 2, and 4k bit EEPROMs for direct connection to serial ports Cystech Electonics ...
A Channel-Erasing 1.8V Only 32Mb NOR Flash EEPROM with a Bit-Line Direct-Sensing SchemeingentaconnectDigest of Technical Papers of the Solid State Circuits Conference
Evaluation of ion implantation charging by using \\{EEPROM\\}CHARGE INVERSION SPECTRADOUBLE CHARGE TRANSFERDIATOMIC ANIONSIon implantation charging has been studied by evaluation of the threshold voltage shift ( 螖V t ) of EEPROM devices. The threshold voltage shifted proportionally with the variation ...
d EEPROM suppliers. Directory for top-ranked EEPROM suppliers.Directory for top-ranked EEPROM suppliers.Presents a directory for top-ranked EEPROM suppliers in the United States. Atmel Corp.; Fairchild Semiconductor Corp.; Infineon Technologies Corp....
Low-cost circuit programs EEPROMs.Discusses a low-cost circuit design for EEPROM. Migration to 3.3V system supplies; Choosing the correct logic families.EliasonJarrodEDN Europe
Multiple direct-write EEPROM cells are disposed within each elongated trench such that each EEPROM cell shares a recall gate and a program gate with another cell in the same trench. Preferably, a silicon rich dielectric (such as silicon rich oxide) disposed between each floating gate and its ...