1/31 October 2004 VN750-E / VN750S-E VN750PT-E / VN750B5-E HIGH SIDE DRIVER Rev. 1 Table 1. General Features s CMOS COMPATIBLE INPUT s ON STATE OPEN LOAD DETECTION s OFF STATE OPEN LOAD DETECTION s SHORTED LOAD PROTECTION s UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN s PROTECTION...
VN750-E / VN750S-E VN750PT-E / VN750B5-E HIGH SIDE DRIVER Rev. 1 Table 1. General Features s CMOS COMPATIBLE INPUT s ON STATE OPEN LOAD DETECTION s OFF STATE OPEN LOAD DETECTION s SHORTED LOAD PROTECTION s UNDERVOLTAGE AND OVERVOLTAGE SHUTDOWN s PROTECTION AGAINST LOSS OF ...
S0/Y2/J1(04.04.077)SN.U565537 LD301D-31I-TD10-012-A1/D0/G0/H3/I5/M0/P8/S0/Y0/J1(04.04.078) SN.U561429 LD301-D33N-TD1V-012/A3D0G0H3J1MIY0Y5I5P8 SN.U565555(920C) LD301H-330-TD10-010/A1/H3/I5/P8/Y2/ZZ SN.U556654(913A)POSITION TRANSMITTER位置变送器 TP301-1-0...
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商品名称 型号 数量 品牌 封装/批号 价格 供应商 PDF资料 操作 PT4211E23E 代理批发PT4211E23ETIP127 9705 华润矽威 SOT23-5 1952+ ￥0.4700元100~999 个 ￥0.3700元1000~9999 个 ￥0.2700元>=10000 个 深圳市港深电子有限公司 5年
在选择场效应管(MOSFET)时,需要考虑以下几个关键参数: 1、类型:N沟道或P沟道MOSFET。N沟道MOSFET通常用于低边开关,而P沟道MOSFET用于高边开关。 2、最大漏源电压:MOSFET能够承受的最大漏极到源极电压。确保工作电压不超过此值。 3、最大栅源电压:MOSFET能够承受的...
⑦http://www.immed.org/treatment%20considerations/06.16.12/AgadjanyanNicolsonJCFS.pdf ⑧https://www.frontiersin.org/articles/10.3389/fphys.2017.00713/full ⑨https://www.sciencedirect.com/science/article/abs/pii/S0300483X17302299...
802D 安装调试手册_部分6 PLC调试 4.4.2 栈运算解释 表４－７ 指令集 4-12 SINUMERIK 802D 安装调试 2002.10
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