Dynamic and Short-Circuit Power of CMOS Gates Driving Lossless Transmission - Ismail, Friedman, et al. - 1998 () Citation Context ...The short-circuit power consumption is significantly less for a smaller repeater since the short-circuit power consumed by a CMOS inverter is quadratically ...
The additional power dissipation in DTMOS inverter due to the diodes is quantified through an analytical model and verified by MEDICI simulation. Power dissipation between conventional SOI CMOS and SOI DTMOS inverters is compared.关键词: CMOS logic circuits integrated circuit modelling leakage currents ...
2.6 Low-Power Circuit Design Techniques As mentioned earlier, there are three sources of power dissipation in CMOS circuits: dynamic power dissipation, short-circuit power dissipation, and static (leakage) power dissipation. Traditionally, dynamic power dissipation has been the dominant source of power...
PURPOSE: A dynamic CMOS circuit is provided to secure regardless of a delay time for deciding the period of an input signal, the pulse width of the input signal and the pulse width of an output signal in a semiconductor device for which the operation of high speed is demanded. CONSTITUTION...
Figure 1. Power dissipation for a simple CMOS inverter The high power dissipation of a processor has at least the following disadvantages: ? High power systems tend to run hot, that causes the processor and other system components to fail. The failure rate of a processor are doubles every 10...
A new digitally dynamic power supply technique for 16-channel 12-V-tolerant stimulator is proposed and realized in a 0.18-μm 1.8-V/3.3-V CMOS process. The proposed stimulator uses four stacked transistors as the pull-down switch and pull-up switch to withstand 4 times the nominal supply vo...
Several techniques are adopted to implement a low power high dynamic range ADC. Firstly, a single-stage inverter replaces the commonly used differential amplifier, in order to reduce the static current. Secondly, the normal NMOS transistor in the inverter stage is replaced by a high threshold ...
And in the PFD, low power and small chip area is realized with the dynamic inverter. A fully CMOS PLL using these components has been designed based 0.6 μm CMOS technology and its SPICE model. SPICE simulation results show that at 2.5V supply voltage, the designed PLL can operate over ...
A novel bias-switching scheme for a high-efficiency power amplifier is proposed. Two voltage levels for the drain bias of the RF power amplifier are generated using a combination of a class E dc/ac inverter and a class E rectifier with offset voltage. When signal peaks occur, the output of...
A conventional outphasing PA is also limited in its output power range, since a zero output power requires the two outphasing paths to cancel each other perfectly, an impractical assumption given the variation of scaled CMOS processes and other nonidealities. One way to implement power control in...