power figures of meritAlGaN/GaN high electron mobility transistors (HEMTs) on chemical vapor deposited (CVD) diamond with different gate–drain spacings (Lgd) are fabricated, and off-state breakdown voltage (BV_
Virginia Polytechnic Institute and State University and NexGen Power Systems Inc in the USA have claimed the first experimental characterization of dynamic on-resistance ( RON) and threshold voltage (VTH) stability in vertical gallium nitride (GaN) power transistors[Xin Yang et al, IEEE Transactions ...
[106] performed pulsed I-V measurement on depletion mode 650 V rated AlGaN/GaN power HEMTs for various temperature. It is found that at high temperatures, band to band tunneling across the channel in GaN buffer creates a positive buffer charge storage, which suppresses the RDS,ON for low ...
Step-stress tests at increasing drain-source voltage and different gate-source voltages are specifically reported. Fe-doped HEMTs exhibit, under both off- and on-state conditions, excellent parametric stability up to breakdown. C-doped devices are instead affected by enhanced degradation effects ...
The designed InAlN/GaN HEMT exhibits the sheet carrier density (ns) of 1.9 脳 10 cm, drain current density (Ids) of 2.1 A/mm, transconductance (gm) of 800 mS/mm, breakdown voltage (VBR) of 40 V, current gain cut-off frequency (ft) of 221 GHz and power gain cut-off frequency (...
mS/mm, the breakdown voltage (VBR) of 40 V, the current gain cut-off frequency (ft) of 221?GHz and the power gain cut-off frequency (fmax) of 290?GHz. The superior static and dynamic characteristics of obtained InAlN/GaN HEMTs undoubtedly placed the device at the forefront for high ...
We have investigated, by using Monte Carlo simulations, the effects of channel thickness on the breakdown dynamics in InP-based lattice-matched HEMTs (LM-HEMTs). Breakdown is due to the parasitic bipolar action of holes generated by impact ionization and accumulated in the low electric field ...
The optimized FP design demonstrated a low Ron,dyn of 2.3 (2.1) 惟-mm at a quiescent drain voltage of 50V in E-mode (D-mode) HEMTs with a breakdown voltage of 138 V (146 V). The corresponding high-frequency performance of E-mode (D-mode) HEMTs of peak fT/fmax = 41/100 GHz ...
BREAKDOWN voltageIn this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA/mm (normally-on) and ...