We have investigated, by using Monte Carlo simulations, the effects of channel thickness on the breakdown dynamics in InP-based lattice-matched HEMTs (LM-HEMTs). Breakdown is due to the parasitic bipolar action of holes generated by impact ionization and accumulated in the low electric field ...
By optimizing the fin structure, a high positive Vthof 4V is achieved without transconductance and breakdown voltage degradation in this work. It breaks the restriction between Vthand on-resistance for conventional p-GaN HEMT. The dynamic characteristics of the FPG HEMT are investigated by SPICE ...
Temperature dependent substrate ramp measurements on AlGaN/GaN power high-electron-mobility transistors (HEMTs) are used to extract information on charge redistribution in the buffer structure as a function of substrate bias. The measurements are compared to a theoretical model, representing the ideal ...
An AlGaN/GaN HEMT power switch employing a field plate and a floating gate We have proposed and fabricated AlGaN/GaN high electron mobility transistors (HEMTs) which increase the gate-drain breakdown voltage by employing a floatin... SC Lee,MW Ha,JC Her,... - 《Physica Scripta》 被引量...
The optimized FP design demonstrated a low $text{R}_{textsf {on,dyn}}$ of 2.3 (2.1) $Omega $ -mm at a quiescent drain voltage of 50V in $mathsf {E}$ -mode ( $mathsf {D}$ -mode) HEMTs with a breakdown voltage of 138 V (146 V). The corresponding high-frequency performance ...
power figures of meritAlGaN/GaN high electron mobility transistors (HEMTs) on chemical vapor deposited (CVD) diamond with different gate–drain spacings (Lgd) are fabricated, and off-state breakdown voltage (BV_(gd)) along with a dynamic specific on-resistance (Dyn.-R_(on,sp)) is measured...
The optimized FP design demonstrated a low Ron,dyn of 2.3 (2.1) 惟-mm at a quiescent drain voltage of 50V in E-mode (D-mode) HEMTs with a breakdown voltage of 138 V (146 V). The corresponding high-frequency performance of E-mode (D-mode) HEMTs of peak fT/fmax = 41/100 GHz ...
The designed InAlN/GaN HEMT exhibits the sheet carrier density (ns) of 1.9 脳 10 cm, drain current density (Ids) of 2.1 A/mm, transconductance (gm) of 800 mS/mm, breakdown voltage (VBR) of 40 V, current gain cut-off frequency (ft) of 221 GHz and power gain cut-off frequency (...
BREAKDOWN voltageIn this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA/mm (normally-on) and ...
The voltage of the signal exceeds the breakdown voltage of the diode, and consequently, impedance mismatch arises due to the nonlinear diode junction resistance becoming a substantially lower value. Particularly, when the input power is greater than 30 dBm, the PCE falls severely due to the gross...