power figures of meritAlGaN/GaN high electron mobility transistors (HEMTs) on chemical vapor deposited (CVD) diamond with different gate–drain spacings (Lgd) are fabricated, and off-state breakdown voltage (BV_
Virginia Polytechnic Institute and State University and NexGen Power Systems Inc in the USA have claimed the first experimental characterization of dynamic on-resistance ( RON) and threshold voltage (VTH) stability in vertical gallium nitride (GaN) power transistors[Xin Yang et al, IEEE Transactions ...
[106] performed pulsed I-V measurement on depletion mode 650 V rated AlGaN/GaN power HEMTs for various temperature. It is found that at high temperatures, band to band tunneling across the channel in GaN buffer creates a positive buffer charge storage, which suppresses the RDS,ON for low ...
Step-stress tests at increasing drain-source voltage and different gate-source voltages are specifically reported. Fe-doped HEMTs exhibit, under both off- and on-state conditions, excellent parametric stability up to breakdown. C-doped devices are instead affected by enhanced degradation effects ...
mS/mm, the breakdown voltage (VBR) of 40 V, the current gain cut-off frequency (ft) of 221?GHz and the power gain cut-off frequency (fmax) of 290?GHz. The superior static and dynamic characteristics of obtained InAlN/GaN HEMTs undoubtedly placed the device at the forefront for high ...
The designed InAlN/GaN HEMT exhibits the sheet carrier density (ns) of 1.9 × 1013 cm−2, the drain current density (Ids) of 2.1 A/mm, the transconductance (gm) of 800 mS/mm, the breakdown voltage (VBR) of 40 V, the current gain cut-off frequency (ft) of 221 ...
We have investigated, by using Monte Carlo simulations, the effects of channel thickness on the breakdown dynamics in InP-based lattice-matched HEMTs (LM-HEMTs). Breakdown is due to the parasitic bipolar action of holes generated by impact ionization and accumulated in the low electric field ...
The optimized FP design demonstrated a low Ron,dyn of 2.3 (2.1) 惟-mm at a quiescent drain voltage of 50V in E-mode (D-mode) HEMTs with a breakdown voltage of 138 V (146 V). The corresponding high-frequency performance of E-mode (D-mode) HEMTs of peak fT/fmax = 41/100 GHz ...
BREAKDOWN voltageIn this paper, we compared the characteristics of normally-on/off AlGaN/GaN MISHEMTs passivated by an in situ/ex situ SiN layer. The devices passivated by the in situ SiN layer revealed enhanced DC characteristics, such as the drain current of 595 mA/mm (normally-on) and ...