Two structures have been chosen, a SiC trench MOSFET and SiC JFET coupled with a Si MOSFET in a Cascode configuration. The paper provides for the first time an insight into the physics of switching of the two structures and proves that the Cascode configur...
an n-channel MOSFET 21 whose gate electrode is connected to the output of the 2nd transfer gate 11, whose source electrode is connected to ground, and whose drain electrode is connected to the output of the 2nd inverter 14, and a P-channel MOS TR 22 whose gate electrode is connected to...
several techniques have been implemented. A first solution for increasing the Dynamic Range of image sensor has been to reduce the level of the noise floor, for instance by reducing the size of the sensors. This strategy suffers from the drawback of decreasing at the same time the saturation ...
With our InGaAs on insulator transistors, we demonstrate different current levels for each logic state, and thus successful memory behaviour, down to a gate length of 14 nm. This is a preview of subscription content, access via your institution Access options Access Nature and 54 other ...
We present a simple method to accurately include these effects in compact models for the dynamic behaviour of MOSFETs. We do this without introducing internal nodes or implicit equations in the MOSFET model. The validity of the model is illustrated by simulation and by comparing with measured ...
Power MOSFETSiChigh voltageswitchingrobustnesspower cyclingshort-circuitThis work addresses the electrical behaviour of high-voltage (HV) SiC MOSFETs, being the main motivation to check their robustness. Large area (25 mm~2) devices rated for 3.3 kV applications were fabricated with a special process...
In order to confirm our approach, an experimental comparison between body tied and DTMOS on SOI substrate has been achieved in terms of LFN behaviour. Furthermore, two different types of DTMOS transistors have been used: with and without current limiter. The LFN in DTMOS is analysed in ohmic ...
The appearance of a velocity overshoot region near the drain, together with the presence of hot carriers in the channel, is observed in the saturation regime. The dynamic behaviour of the device is described through significant small signal equivalent circuit parameters, which are examined by means...
Measurements on SiC MOSFET body diodes under high dynamic stress show the effect of a clamping of the drain-source-voltage together with a generation of additional charge carriers at turn-off. This paper analyses the cause of this effect and its dependence on switching speed and commutation ...
The physics of the static and dynamic behaviour of this device under charge imbalance is explained with the help of numerical simulations.ShenoyP.M.BhallaA.Power Semiconductor Devices and ICs, 1999. ISPSD '99. Proceedings., The 11th International Symposium on...