Two structures have been chosen, a SiC trench MOSFET and SiC JFET coupled with a Si MOSFET in a Cascode configuration. The paper provides for the first time an insight into the physics of switching of the two structures and proves that the Cascode configura...
Oct072011 In this paper, the dynamic behaviour of high power IGBT’s in parallel, the IGBT parameters influencing paralleling and other external parameter which are influential are discussed. Experimental results showing dynamic current sharing behaviour of IGBT’s under single gate driver operation, un...
While the first type of destabilisation leads to the appearance of a travelling filament, the second one results in the development of a quasi-stationary filament. Introduction The appearance and dynamic behaviour of current-density filaments in semiconductors and semiconductor devices have been studied ...
The dynamic behaviour of surface dimers on Ge(001) has been investigated using a variable-temperature (VT) STM. It is clarified that symmetric-appearing di... S Tomoshige,I Masashi,T Hiroshi - 《Journal of Electron Microscopy》 被引量: 21发表: 1999年 Design of a Low-Power Quaternary Flip...
We present a simple method to accurately include these effects in compact models for the dynamic behaviour of MOSFETs. We do this without introducing internal nodes or implicit equations in the MOSFET model. The validity of the model is illustrated by simulation and by comparing with measured ...
Power MOSFETSiChigh voltageswitchingrobustnesspower cyclingshort-circuitThis work addresses the electrical behaviour of high-voltage (HV) SiC MOSFETs, being the main motivation to check their robustness. Large area (25 mm~2) devices rated for 3.3 kV applications were fabricated with a special process...
Oct072011 In this paper, the dynamic behaviour of high power IGBT’s in parallel, the IGBT parameters influencing paralleling and other external parameter which are influential are discussed. Experimental results showing dynamic current sharing behaviour of IGBT’s under single gate driver operation, un...
an n-channel MOSFET 21 whose gate electrode is connected to the output of the 2nd transfer gate 11, whose source electrode is connected to ground, and whose drain electrode is connected to the output of the 2nd inverter 14, and a P-channel MOS TR 22 whose gate electrode is connected to...
In order to confirm our approach, an experimental comparison between body tied and DTMOS on SOI substrate has been achieved in terms of LFN behaviour. Furthermore, two different types of DTMOS transistors have been used: with and without current limiter. The LFN in DTMOS is analysed in ohmic ...
Under static degradation regime, drain current behaviour was determined by the creation of two discrete traps most likely located in the drain vicinity; a hole trap cited in the literature and a defect of metastable nature. Under dynamic degradation regime, drain current behaviour was determined by...