A DV/DT detection and protection apparatus and method. The apparatus comprises: a DV/DT detection circuit for detecting the DV/DT voltage variation amount, the circuit comprising several high-voltage MOS tubes (MA1, MA2), resistors (R1, R2), clamp diodes (D1, D2) and parasitic capacitors...
A circuit for controlling the rate of change (dv/dt) of forward blocking voltage reapplied across a silicon controlled rectifier to prevent the silicon controlled rectifier from conducting after the silicon controlled rectifier is turned off including an LC network connected to the silicon controlled ...
The controller provides constant charging current to the the external MOSFET during startup. The external dvdt start-up circuit at the GATE diverts part of that charging current to slow down the rate of startup dV/dt and hence the inrush current gets reduced ...
A configurable quad-slope 70V GaN gate driver is designed to optimize the EMI noise and to simultaneously improve the level shifter’s robustness based on dV/dt detection and delay compensation. A three-mode level shifter with enhanced negative voltage tolerance (ENVT) and commonmode nois...
18. S-80730AL/AL-AT-X, S-80730AN/AN-DT-X S-80730SL-AT-X, S-80730SN-DT-X (Detection voltage : 2.928 to 3.072 V) (Unless otherwise specified : Ta=25°C) Test circuit 1 Parameter Symbol Conditions Min. Typ. Max. Unit Detection voltage Hysteresis width -VDET ...
(dV/dt)c(V/µs) 1000 Tj initial = 25°C 100 10 (dI/dt)c(A/ms) 1 1 100 1000 4/7 Doc ID 18270 Rev 1 TPDVxx40 Package information 2 Package information ● ● ● Epoxy meets UL94,V0 Cooling method: C (by conduction) Recommended torque value: 0.9 to ...
—192kHzcapableintegratedS/PDIFtransmitter—DTVswithIntegratedSoundbars—DAOcanoperateinmasterorslavemode(SCLK—HDTVStands/FurniturewithIntegratedSoundbarsLRCLK)—AutomotiveHeadUnits•IntegratedClockManager/PLL—AutomotiveOutboardAmplifiers—Capableofoperatingfromawidevarietyofexternal—Blu-rayDisc®DVDReceivers/HT...
6. The circuit of claim 1, wherein the resistor is an SMT resistor having a resistance value which determines a dV/dt ratio of the circuit. 7. The circuit of claim 1, wherein the circuit is connected across an inductive load.
By this circuit, the switching performances of IGBT such as dv/dt, di/d... S Takizawa,S Igarashi,K Kuroki - IEEE Power Electronics Specialists Conference 被引量: 51发表: 1998年 Independent closed loop control of di/dt and dv/dt for high power IGBTs As the insulated gate bipolar ...
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