PURPOSE: A method of forming a dual gate of a DRAM(Dynamic Random Access Memory) device is provided to improve electrical properties of the DRAM device by performing selectively nitridation on a gate oxide layer. CONSTITUTION: A semiconductor substrate(100) includes a cell region and a peripheral...
A Unique Dual-Poly Gate Technology for 1.2-V Mobile DRAM with Simple In situ n+ -Doped Polysilicon. Highly manufacturable sub-100-nm 1.2-V mobile dynamic random access memory (DRAM) having full functionality and excellent reliability have been successfull... Son,Nak-Jin,Yongchul,... - 《IE...
Semiconductor DRAM cell structure having low leakage capacitor This invention discloses a DRAM cell includes an asymmetric transistor coupled to a capacitor. The asymmetric transistor includes a drain region extending upward from an isolator region; a gate region extends upward from a gate dielectri.....
A DRAM cell is disposed in an electrically isolated region of a semiconductor body. The cell includes a storage capacitor disposed in a trench. The capacitor is disposed entirely within the isolated region of the semiconductor body. The cell includes a transistor disposed in the isolated region. ...
Sea Gate ST600MM0009 2.5 600GB 10K RPM SAS 12Gb/s 128MB SFF Dual Port Hot-Plug Enterprise Hard Disk Drive New External Product $120.00 - $134.00 Min. order: 1 piece 872479-B21 HPE 1.2TB 2.5-inch SFF SAS 12Gb/s 10K RPM 512n Enterprise hard disk $148.00 Min. order: 1 piece Sas...
High density embedded DRAM technology with 0.38 /spl mu/m pitch in DRAM and 0.42 /spl mu/m pitch in LOGIC by W/PolySi gate and Cu dual damascene metallization A high density Embedded DRAM technology has been developed with 0.38 /spl mu/m pitch in DRAM and 0.42 /spl mu/m pitch in ...
Devices were fabricated with the lead zirconatetitanate thin film as the ferroelectric layer and Au nanocrystals for gate-injected electron storage. Pulsed programming measurements were also performed to distinguish the memory window obtained from the two mechanisms in DRAM and Flash operations. 展开 ...
型号: SN74LVC2G132DCUR 批号: 20+ 数量: 31686 制造商: Texas Instruments 产品种类: 逻辑门 RoHS: 是 逻辑功能: AND 逻辑系列: 74LVC 栅极数量: 2 Gate 输入线路数量: 2 Input 输出线路数量: 1 Output 高电平输出电流: - 32 mA 低电平输出电流: 32 mA 传播延迟时间: 6 ns 电源电压-最大: 5.5 ...
This document presents a proposal of implementation of the Heapsort algorithm, which utilizes hardware features of modern Field-Programmable Gate Array (FP... - Proceedings of SPIE - The International Society for Optical Engineering 被引量: 17发表: 2011年 Dual port memory A video random access me...
A dual-bit split-gate EEPROM (DSG) cell in contactless array for single-Vcc high density flash memories A new source-side injection Dual-bit Split-Gate (DSG) flash EEPROM cell is designed and characterized. With a 0.6 /spl mu/m process, the cell-size of 1.95 ... Y Ma,CS Pang,KT ...