Drift-step-recovery diodes (DSRDs) are key components in nanosecond and subnanosecond pulsed-power solid-state circuits. The fabrication of a high-voltage (HV) diode is typically a four-layer structure, which requires a lengthy, deep diffusion (10's of micrometer) process. The diode voltage ...
A stack of drift- step-recovery diodes (DSRDs) can produce high-voltage pulses with a rise rate of the order of 1 kV/ns. Their building blocks, i.e., the DSRD dies, are designed and manufactured at Soreq Nuclear Research Center based on silicon epitaxial layers. A characterization ...
cnAbstract: Silicon carbide (SiC) drift step recovery diode (DSRD) is a kind of opening-type pulsedpower device with wide bandgap material. The super junction (SJ) structure is introduced in the SiCDSRD for the f i rst time in this paper, in order to increase the hardness of the recover...
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The time from the input signal stepdown to the output settling to within 100 μV of its final value is the overdrive recovery time. INPUT OVERVOLTAGE PROTECTION Although the AD8551/AD8552/AD8554 are rail-to-rail input amplifiers, exercise care to ensure that the potential difference between ...
Table 3. Parameter DYNAMIC PERFORMANCE −3 dB Bandwidth Bandwidth for 0.1 dB Flatness Slew Rate Settling Time to 0.1% Test Conditions/Comments G = +1, VOUT = 0.02 V p-p G = +1, VOUT = 2 V p-p G = +1, VOUT = 0.02 V p-p G = +1, VOUT = 2 V step G = +2, VOUT =...
The generator is based on an opening switch in the form of a unit of drift step-recovery diodes (DSRDs). The conditions for the efficient operation of DSRDs are provided by six self-contained modules each of which contains an IGBT transistor and a step-up saturable-core transformer. The ...
؇C max Drift 1.5 pA max Input Bias Current 114 dB Open-Loop Gain Available in Plastic Mini-DIP, 8-Pin Header Packages, or Chip Form APPLICATIONS Low Noise Photodiode Preamps CT Scanners Precision I-V Converters PRODUCT DESCRIPTION The AD645 is a low noise, precision FET input op amp....