7月29日锐龙内存超..您将获得对Zen 2,X570的全面支持,更新的预设,新功能,x399的调教技巧,当然还有新版本的MEMbench(Custom和随机延迟测试)。*部分支持ZEN 2(三星b-die hynix cj
当时用DRAM-Calculator-for-Ryzen-1.5算的时序,感觉已经很满意了。现在DRAM-Calculator-for-Ryzen-1.6.0.1出了,经过反复测试,终于弄到理想的时序。通过了memtest 64 10轮测试,AIDA64 stress system memory 10分钟测试、 通过Membench 的memtest模式TASK scope 200%测度,通过prime95 Large FFTS(stress memory ...
DRAM Calculator for Ryzen is designed to assist you with memory overclocking for the AMD Ryzen platform. It will provide suggestions for optimized timing sets, allowing you to achieve higher (and more stable) memory overclocks. It will work with AMD Ryzen Zen architecture first and second-gener...
Added the "New version?" button. - button allows you to visit the product homepage and read the materials regarding DRAM Calculator for Ryzen™, check for updates or ask any question. Error fixes and some graphical adjustments. Changelog 1.7.0 ...
超内存不要用DRAM..自己根据默认微调来的14-15-15-15-30 电压1.376v soc电压1.16 其他全部自动能过memtest150%,几天游戏下来没出问题所以上面软件算的是啥玩意? 低时许 稳定性又不好
它不仅可以读取时序,还可以用彩色显示时序状态。您的个人助理,用于创建个人预设。·添加了“新版本?”按钮。该按钮使您可以访问产品主页并阅读有关RyzenTM DRAM计算器的材料,检查更新或提出任何问题。·错误修复和一些图形调整。 送TA礼物 1楼2020-05-10 13:48回复 ...
Ryzen用户性能优化的重要工具。CTR通过提供超频解决方案，帮助用户在不牺牲系统稳定性的情况下提升CPU性能。而DRAM Calculator for Ryzen则专注于内存调整，确保内存频率与CPU的Fclk保持一致，从而实现最佳性能。通过使用这些工具，用户可以根据自己的需求和系统的实际表现进行微调，以获得最佳的性能体验。
DRAM Calculator for Ryzen aims to simplify the process as much as possible, letting you get more out of your memory sticks than usual. There is no installation process for DRAM Calculator for Ryzen, and all you'll need to do is unzip it to run it. That makes the program extremely ...
DRAM Calculator for Ryzen 1.7.2 – what’s new An update article written and provided by Yuri "1usmus" Bubliy, author of this application. The DRAM Calculator for Ryzen 1.7.2 is one of the few versions that has received a global memory retest on the newest AGESA. Over 900 hours were...
The DRAM Calculator for Ryzen 1.7.1 which supports AMD's Ryzen CPU platform is one of the few versions that has received a global memory retest on the newest AGESA. Over 900 hours were spent testing memory based on Samsung b-die, Micron e-die (062 and 055), and Hynix CJR(DJR) ...