Drain-source on-resistance (RDS(on)) is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state. As the VGS increases, the on-resistance generally decreases. The measurement is made in the ...
静态drain-source on-resistance 翻译结果5复制译文编辑译文朗读译文返回顶部 静态排泄来源在抵抗 相关内容 aContact Apple Telephone Technical Support 联络苹果计算机公司电话技术支持[translate] a太多的谎言,过多的借口 Too many rumors, excessively many excuses[translate] ...
对于MOSFET而言,第二把交椅是阈值电压(Gate-source threshold voltage,VGS(th))。 这个排名或许会有争议,为何不是电流(DC drain current,ID)或导通电阻(Drain-source on-state resistance,RDS(on))? 很遗憾,笔者不是销售视角(电压/电流,电压/导通电阻朗朗上口),而更多的是从芯片设计角度来看数据表;所以暂且搁置...
求翻译:Drain-Source On-Resistance RDS(ON是什么意思?待解决 悬赏分:1 - 离问题结束还有 Drain-Source On-Resistance RDS(ON问题补充:匿名 2013-05-23 12:21:38 漏源导通电阻RDS (ON 匿名 2013-05-23 12:23:18 正在翻译,请等待... 匿名 2013-05-23 12:24:58 正在翻译,请等待... 匿名 ...
This is the resistance between the drain-source when MOSFET is on at the specified gate-voltage. To measure the drain-source resistance (RDS(ON)), first, apply a voltage that exceeds the specified threshold voltage (Vth) between the gate and source. Next...
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The invention discloses a process method for reducing the drain-source ON resistance RDS (ON) of a metal-oxide-semiconductor field effect transistor (MOSFET) power device. The method comprises a technical scheme A and a technical scheme B. The method comprises the following steps of: selecting ...
Static Drain- Source On State Resistance问题补充:匿名 2013-05-23 12:21:38 静态漏源通态电阻 匿名 2013-05-23 12:23:18 静态排放——源于国家电阻 匿名 2013-05-23 12:24:58 静态流失来源在状态抵抗 匿名 2013-05-23 12:26:38 静态排水-国家抗源 匿名 2013-05-23 12:28:18 有...
A series resistance model is developed to accurately predict the drain/source resistance of MOSFETs in the ultra submicron regime. The series resistance model is based on the differential resistance concept and the mean value theorem of integrals. Three
As MOSFETs size shrinks into the deep-submicrometer regime, shallow source and drain junctions and small source/drain series resistance will be required. MOSFET with polysilicon-elevated source/drain (PESD) structure can meet these requi... Z Sun,L Liu - International Conference on Solid-state ...