drain current equationMOSFETWe present a rigorously derived current solution for undoped double-gate (DG) MOSFETs with two carriers, which is based on surface potentials. The third-order Newton–Raphson (NR) method is used to solve the surface-potential equations resulting from the application of ...
In this work, an analytical drain current model for Gate and Channel Engineered RingFET (GCE-RingFET) has been developed by solving 2D-Poisson equation in cylindrical coordinates. The authenticity of proposed model for GCE-RingFET architecture has been justified by comparing the analytical results ...
In this paper, using a 2-D Poisson equation (in cylindrical coordinates), an analytical drain current model of a nanoscale RingFET architecture has been developed for the first time. Major short-channel effects, such as channel length modulation, velocity scattering, and drain-induced barrier lowe...
Hierarchical approach to "atomistic" 3-D MOSFET simulation drain voltage, we have developed a self-consistent option based on a solution of the current continuity equation restricted to a thin slab of the channel... A Asenov,AR Brown,JH Davies,... - IEEE Transactions on Computer-Aided Design...
A drain current Iof a MOSFET is calculated and substituted into a relational expression for a drain current noise spectrum density obtained from a Nyquist theorem equation, thereby calculating a thermal drain noise coefficient γ of the MOSFET by substituting the current Iinto a relational expression...
- 《Japanese Journal of Applied Physics》 被引量: 2发表: 1998年 Modeling the drain current and its equation parameters for lightly doped symmetrical double-gate MOSFETs A 2D model for the potential distribution in silicon film is derived for a symmetrical double gate MOSFET in weak inversion. ...
Assuming that the thermal resistance of the product is Rth(ch-c),the temperature rise ΔT due to the heat generated by the loss is given by the following equation. ΔT = PRlossx Rth(ch-c) The channel temperature is obtained by adding ΔT ...
A new approach to analytically solving the two-dimensional Poisson's equation and its application in short-channel MOSFET modeling An analytical solution for the potential distribution of the two-dimensional Poisson's equation with the Dirichlet boundary conditions has been obtained fo... Pole-Shang,...
silicon Limited Drain Current and pulsed drain current in MOSFETs Introduction Datasheets of the modern power MOSFET devices, either of low voltage or of high voltage, show in the section entitled "Absolute Maximum Rating" the valu...
For an electrolyte buffer solution, the λD is expressed by the following equation: (1)λD=14πlB∑iρizi where lB is the Bjerrum length = 0.7 nm, and ρi and zi are the density and valence, respectively, of ion species i. The screening directly depends on the Debye–Hückel length ...