It is derived from closed-form solutions of Poisson's equation, and current continuity equation without the charge-sheet approximation. The entire I{sub}(ds) (V{sub}g, V{sub}(ds)) characteristics for all regions of MOSFET operation: linear, saturation, and subthreshold, are covered under ...
A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation... Z Zhu,D Yan,G Xu,... - 《Journal of Semiconductor Tech...
In this paper, using a 2-D Poisson equation (in cylindrical coordinates), an analytical drain current model of a nanoscale RingFET architecture has been developed for the first time. Major short-channel effects, such as channel length modulation, velocity scattering, and drain-induced barrier lowe...
A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs非掺杂对称双栅的基于完整表面电势的核心模型 A surface potential-based model for undoped symmetric double-gate MOSFETs is derived by solving Poisson's equation to obtain the relationship betwe en the ... He Jin,Zh...
The impact of high doping clusters, particularly on charge injection, has been studied in detail for the first time using full quantum simulation based on the 2D nonequilibrium Green function approach coupled self-consistently to Poisson's equation. We have assumed an average lateral symmetry for ...
IDSL can be written as: Equation 3 IDSL = ---T---J---M---A---X---–---2---5---°---C--- RDSON(TJMAX) • RTHJC Sometimes, in the Power MOSFET datasheets, the Silicon Limited Drain Current is shown at ...
The channel temperature is obtained by adding ΔT to the case temperature TCduring MOSFET operation, so the following equation must be satisfied. Tc+ ΔT < Tch(max) Solving the above formula for the IDgives: IDPcan be considered in the same way...
A new approach to analytically solving the two-dimensional Poisson's equation and its application in short-channel MOSFET modeling An analytical solution for the potential distribution of the two-dimensional Poisson's equation with the Dirichlet boundary conditions has been obtained fo... Pole-Shang,...
The simplest equations that illustrate this behavior and are very useful for low-power considerations will be used. The drain current (ID)–drain voltage (VD) relationship can be expressed by the equation (1)ID=WμCoxL(VG−VT−0.5VD)VD where W is the gate width, L the gate length,...
A drain current Iof a MOSFET is calculated and substituted into a relational expression for a drain current noise spectrum density obtained from a Nyquist theorem equation, thereby calculating a thermal drain noise coefficient γ of the MOSFET by substituting the current Iinto a relational expression...