Ohno, S. Kishimoto, and K. Maezawa, "Drain current DLTS of AlGaN/GaN HEMTs," Phys. Stat. Sol. A, vol. 200, no. 1, pp. 195-198, Nov. 2003.T. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto, K. Maezawa, Drain
Ohno, S. Kishimoto, K. Maezawa, Drain current DLTS of AlGaN/GaN HEMTs, Phys. Status Solidi A 200 (1) (Nov. 2003) 195-198.T. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto, and K. Mzezawa, "Drain current DLTS of AlGaN/GaN HEMTs," Phys. Stat. Sol. (A), vol. ...
Ohno, S. Kishimoto, and K. Maezawa, "Drain current DLTS of AlGaN/GaN HEMTs," Phys. Stat. Sol. A, vol. 200, no. 1, pp. 195-198, Nov. 2003.T. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto, K. Maezawa, Drain current DLTS of AlGaN/GaN HEMTs, Phys. Status Solidi...
The transient behaviour of AlGaN/GaN HEMTs was studied by current DLTS. One electron trap and two hole-trap-like signals were observed. The electron trap had an activation energy of 0.61 eV, which was similar to the defect level in n-GaN obtained by capacitance DLTS. It has been pointed ...
The transient behaviour of AlGaN/GaN HEMTs was studied by current DLTS. One electron trap and two hole-trap-like signals were observed. The electron trap had an activation energy of 0.61 eV, which was similar to the defect level in n-GaN obtained by capacitance DLTS. It has been pointed ...
The transient behavior of AlGaN/GaN MIS-HEMTs was studied by drain current DLTS. Two negative peaks with activation energies of 0.49 eV and 0.62 eV were observed in the DLTS spectrum. The location where these levels existed was studied in detail.Toru Okino...