DP8205 uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in othe 登录后可查看全文
丝印L8810,印字8810,SOT23-6品牌,低内阻双N-MOS 20V/6.5A,8810 兼容DP8205B,SOT-23-6L Plastic-Encapsulate MOSFETS DESCRIPTIONThe FS8810L uses advanced trench technology to provide excellentRDS(ON) and low gate charge. It is ESD protected. This device is suitablefor use as a uni-directional o...
DP8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in oth 登录后可查看全文
DP8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in oth 登录后可查看全文
GENERAL DESCRIPTION DP8205 uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in othe 登录后可查看全文...