The effective channel lengths extracted by this method agree with the distance between the source and the drain fairly well关键词: Effective channel length Double-diffused MOSFET Parameter extraction 会议名称: International Conference on Microelectronic Test Structures ...
SOLUTION: For the control of the threshold of the MOS transistor, phosphorus is used for DDD impurity layer formation, the phosphorus is diffused to a channel region as well at the time of the thermal diffusion of the DDD impurity layer, and the threshold control of the MOS transistor and ...
Lateral double diffused mos device and method for manufacturing the device A lateral double diffused metal oxide semiconductor (LDMOS) device and a method of manufacturing the same. A LDMOS device may include a high voltage well f... 李镕俊 被引量: 0发表: 2009年 ...
forming channel regions in surface zone of the well regions disposed between first conduction type zone of the semiconductor substrate and the source regions, above which channel regions being provided gate electrodes through an insulating film, forming a guard ring region surrounding the well regions,...
17. The method of claim 16 further comprising providing a layer, well, or substrate under the enhanced drift region and the body region, wherein the layer, well, or substrate has the same conductivity type as the enhanced drift region. 18. The method of claim 8 further comprising providing...
Vo1.25,No.1(2008)262 ANovelSuper—JunctionLateralDouble.DifusedMetal—Oxide—Semiconduct0r FieldEfectTransistorwithn—TypeStepDopingBuferLayer CHENGJian—Bing(成建兵)h,ZHANGBo(张波),DUANBaoxing(段宝兴),一,LIZhao.Ji(李肇基) StateKeyLaboratoryofElectronicThinFilmsandIntegratedDevices ,UniversityofElectronic...
Field effect transistor, in particular double due to diffused field effect transistor, as well as the manufacturing method 来自 掌桥科研 喜欢 0 阅读量: 5 申请(专利)号: DE2003126523 申请日期: 2003-06-12 公开/公告号: DE10326523A1 公开/公告日期: 2005-01-13 申请(专利权)人: INFINEON ...
A double-diffused metal-oxide-semiconductor field effect transistor (DMOSFET) device comprising an insulating layer having an opening on the top surface of a semiconductor wafer, channel regions and well regions and source regions formed through two stage deffusions of impurity materials respectively of...
A method for manufacturing double-diffused metal-oxide-semiconductor field effect transistor (DMOSFET) device is to form an insulating layer having an opening in top surface on a semiconductor wafer, channel regions and well regions and ... S Akiyama,M Suzumura,T Nobe - US 被引量: 42发表: ...
After deep well injection is... 熊涛,罗啸,陈华伦,... 被引量: 4发表: 2010年 PSOI pLDMOS with n-buried layer Partial-silicon (Si)-on-insulator p-channel lateral double-diffused metal-oxide-semiconductor field-effect transistor with n-buried layer (NBL PSOI pLDMOS)... Lijuan Wu,Yue ...