网络释义 1. 扩散双电层 diffuse... ... 1. diffused layer: 扩散层 2.diffused double layer:扩散双电层3. lifted diffused-layer: 凸起扩散层 ... www.showxiu.com|基于4个网页
FORMING METHOD FOR DOUBLE DIFFUSED LAYERPURPOSE: To form impurity in a deeper diffused layer in an accurate concentration as set when a double diffused layer made of an n-type layer and a p-type layer having different depths is formed on a surface of a semiconductor.SAWADA MUTSUMI...
transistor, phosphorus is used for DDD impurity layer formation, the phosphorus is diffused to a channel region as well at the time of the thermal diffusion of the DDD impurity layer, and the threshold control of the MOS transistor and the DDD impurity layer are both carried out in a single...
The N-type semiconductor substrate 1 makes a drain region, the polysilicon film 4 making a gate electrode, an N<Sup>+</Sup> diffused layer 15 making a source, the substrate 1 making a drain, and a wiring metal 19 makes a source electrode. Therefore, after an opening is provided in ...
Additionally, the body, the layer and the first and second regions form the respective regions of a one conductivity-- opposite conductivity--one conductivity switching transistor wherein said first and second regions form multiple collectors. 展开 ...
A new solution based on the concept of a deep drain diffusion combined with field plates (FPs) is proposed for the superjunction lateral double diffused MO... Z Lin,X Chen - 《IEEE Electron Device Letters》 被引量: 18发表: 2015年 4H-SiC layer with multiple trenches in lateral double-dif...
Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral double-diffused metal oxide semiconductor transistor. Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral double-diffused metal oxide ...
New models for two different MOS-controlled HV devices, the insulated-gate-bipolar transistor (IGBT) and the double-diffused MOS transistor (DMOST), are developed. The effects of the buffer layer and static/dynamic latch-up in the ... Kim, Yeong-Seuk. - University of Florida. 被引量: ...
A semiconductor component, with a region (22) for creating a drift field (E1, E2) from an underlying substrate (21) and from an overlying semiconductor layer (2) towards the region, is new. A semiconductor component, comprising a first conductivity type semiconductor substrate (21) bearing a...
Double diffused mosfet with potential biases 专利内容由知识产权出版社提供 专利名称:Double diffused mosfet with potential biases 发明人:Koji Shirai 申请号:US07/132032 申请日:19871214 公开号:US04 884 116A 公开日:19891128 摘要:First and second single crystal silicon substrates are integrated, by means...