with at least one pump laser pulse having a pump laser pulse power generating an amount of excess carrier concentration in the semiconductor substrate which is at least comparable to the peak concentration of the active doping profile; directing a probe laser beam on the semiconductor substrate such...
In this particular case, arsenic therefore acts as a donor dopant, providing an extra electron to the crystal. Since these additional carriers are negatively charged, the doped semiconductor is referred to as n-type. We can also dope the silicon with a Group III element, such as boron, an ...
Doping concentration refers to the amount of foreign elements added to a semiconductor material, such as Co, Fe, La, Zn, C, or S, to enhance its photocatalytic activity by modifying its optical properties and charge dynamics. AI generated definition based on: Journal of Electronic Science and ...
e Distribution of Al and Ga atoms by EDS mapping corresponding to the region in panel d. f EDS line scanning curve of Al composition in the p-AlGaN SLs. g Mg concentration profile by SIMS in the desorption-tailored p-AlGaN SLs as well as in an uninterrupted-grown Al0.63Ga0.37N epi...
Electron correlations play a dominant role in the charge dynamics of the cuprates. We use resonant inelastic X-ray scattering (RIXS) to track the doping dependence of the collective charge excitations in electron doped La2−xCexCuO4(LCCO). From the resonant energy dependence and the out-of...
Accordingly, it is an object of this invention to simplify semiconductor analysis and to reduce the time and skill required for determining the doping profile in semiconductor wafers. It is another object of this invention to reduce or eliminate the contamination of semiconductor wafers resulting from...
关键词: III-V semiconductors deep levels doping profiles gallium compounds hydrogen indium compounds light emitting diodes magnesium semiconductor device breakdown semiconductor device reliability 会议名称: IEEE International Reliability Physics Symposium 会议时间: 2004 ...
in the first and second regions of the semiconductor substrate; forming a first mask layer in the second region of the semiconductor substrate; forming impurity layers having the second conductivity type in the first region of the semiconductor substrate by performing serial ion implantations with ...
The second step is to create a doping profile into the channel-region of the semiconductor substrate. The doping profile is created by a) performing a first doping implantation with a first dopant in a first concentration to a first depth within the semiconductor substrate, and b) performing a...
An ultra-large scale integrated circuit semiconductor device having a laterally non-uniform channel doping profile is manufactured by using a Group IV element implant at an implant angle of between 0° to 60° from the vertical to create interstitials in a doped silicon substrate under the gate ...