The doping concentration and resistivity of the silicon wafer in our experiment were calculated to be 1.53?±?0.47?×?1016cm?3and 1.08?±?0.41??·cm, respectively, by measuring the optical loss caused by the sample, which are consistent with that obtained with conventional four-point probe ...
The doping can make the carrier concentration increases, the lower resistivity of the material. 翻译结果2复制译文编辑译文朗读译文返回顶部 The doping can make the carrier concentration increases, the lower resistivity of the material. 翻译结果3复制译文编辑译文朗读译文返回顶部 ...
As a means to effectively regulate the carrier concentration of semiconductor, doping can greatly improve the electrical properties of BiCuSeO. a. Mono-doping In BiCuSeO, Cu is positive 1, Bi is positive 3, Se and O are minus 2, P-type doping requires the introduction of positive elements ...
www.nature.com/scientificreports OPEN Tunable resistivity of correlated VO2(A) and VO2(B) via tungsten doping Songhee Choi1, Gihyeon Ahn2, Soon Jae Moon2 & Shinbuhm Lee1 ✉ Applications of correlated vanadium dioxides VO2(A) and VO2(B) in electrical devices are limited...
A concentration of 7 × 1016 ± 2 × 1016 72Ge atoms/cm3 was measured in one of the samples from Experiment #2. The reason for the large error in this measurement is because of how similar the atoms being measuring against are. 72Ge and 71Ga are only one proton ...
Craig, Concentration and co-doping dependence of the 4F3/2 to 4/I11/2 lasing behavior of Nd3+ silica fibers, Zhurnal Mikrobiologii Epidemiologii I Immunobiologii, 72(2), 113–5 (1995) Google Scholar V. Rakovics, R. Fornari, C. Paorici, L. Zanotti, and C. Mucchino, Indium-...
One important bottleneck is the high electrical resistivity of Sb2S3. Our first﹑rinciples calculations reveal that the high resistivity results from the compensation between the intrinsic donor VS and acceptors VSb, SbS, SSb which have comparably high concentration (low formation energy). The ...
This optimization yields a resistivity of 0.5 × 105 Ω cm, a Hall mobility of 2.49 cm2/V s, and an electron concentration of 4.59 × 1017 cm3. The optical band gap values were found to change with Ru doping from 1.64 to 1.72 eV. The sample with a Ru-doping level of 6 at.% ...
Doping elementDoping concentration (1019cm−3)Doping modeActivation energy (meV)Resistivity Ω cmMobility (cm2/Vs)Reference Be 3.00 Ion implantation 210 43000 27 [116] Mg 0.1890.163 In-situ doping 300 0.1280.132 35.229.1 [117][118] Zn 1.00 In-situ doping 31 12 0.5 [119] At present, ...
The sample with the lowest resistivity is 0.33 mΩ cm with active concentration of 3.4 × 1020 cm−3 and mobility of 55 cm2/Vs. Second, this process lessens the trade-off between the Sn content and the B concentration: for the same Sn content, GeSn:B layers grown ...