Reports the qualification for the 0.18-micron complementary metal oxide semiconductors process by Dongbu Electronics Co. Ltd. in Eumsung, Korea. Increase in the demand of the technology for SoC designs; Integration of a processing engine and memory with logic; Release of a mixed-signal version of...
Dongbu HiTek Co., Ltd. specializes in developing superb analog and mixed-signal processing technologies. The company adds high value to advanced ICs with a processing portfolio that encompasses Analog CMOS, BCDMOS, High Voltage CMOS, CMOS Power Amplifier (PA), CMOS Image Sensor (CIS), Display ...
The company develops, manufactures consumer electronics, internet communications and security protection products. Based in Beijing, Tianyu Communication Equipment Co., Ltd. is a leading mobile phone manufacturer officially licensed by the Chinese government to manu...
Application Number: 11/528567 Publication Date: 05/03/2007 Filing Date: 09/28/2006 Export Citation: Click for automatic bibliography generation Assignee: Dongbu Electronics Co., Ltd. Primary Class: 257/288 Other Classes: 257/E21.197, 257/E21.275, 257/E21.293, 257/E21.619, 257/E21.621, 257...
A semiconductor device and method of manufacturing the same are disclosed. An example semiconductor device includes a semiconductor substrate having a first well, a first source ele
Application Number: 11/019352 Publication Date: 10/17/2006 Filing Date: 12/23/2004 Export Citation: Click for automatic bibliography generation Assignee: Dongbu Electronics Co., Ltd. (Seoul, KR) Primary Class: 438/257 Other Classes: 257/E21.546, 257/E21.682, 257/E27.103, 438/296 ...
Click for automatic bibliography generation Assignee: Dongbu Electronics Co., Ltd. (Seoul, KR) Primary Class: 257/698 Other Classes: 257/777, 257/E23.061, 257/E23.063, 257/E23.14, 257/E25.013 International Classes: H01L23/12;H01L23/24;H01L23/498;H01L25/065; (IPC1-7): H01L23/...
A bonding pad of a semiconductor device and a fabrication method thereof are disclosed. A semiconductor device having a pad formed by exposing a predetermined region of a metal line
A FinFET and a fabrication method thereof. The FinFET device includes an SOI substrate realized through a substrate, a buried oxide layer formed on the substrate, and a silicon epit
A method for fabricating a semiconductor device including forming a depression in a front surface of a semiconductor substrate, forming an electrode pad within the depression, formi