The deep level transient spectroscopy (DLTS) technique was used to investigate the effects of electron beam exposure (EBE) on n-GaN. A defect with activation energy of 0.12 eV and capture cross section of 8.0×10–16 cm was induced by the exposure. The defect was similar to defects induced...
Point defects in SiGe expitaxial layers and Bulk Crystals 17th International Conference on Defects in Semiconductors, Gmunden July 18-23 1993 InP Walters, R. J. and Summers, G.P. Deep Level Transient Spectroscopy Studies of Proton inrradiated p-type InP J. Appl. Phy. 69 (9), 6488, 1991...
12、l layers and Bulk Crystals 17th International Conference on Defects in Semiconductors, Gmunden July 18-23 1993InPWalters, R. J. and Summers, G.P. Deep Level Transient Spectroscopy Studies of Proton inrradiatedp-type InP J. Appl. Phy. 69 (9), 6488, 1991Zn in SiWeiss, S., Beckmann...
A. Point defects in SiGe expitaxial layers and Bulk Crystals 17th International Conference on Defects in Semiconductors, Gmunden July 18-23 1993 InP Walters, R. J. and Summers, G.P. Deep Level Transient Spectroscopy Studies of Proton inrradiated ...
The properties of the defects created in CIGSS during growth and their influence on device performance are still only partially understood5,6. Studies investigating defects in CIGSS have been conducted by several research groups in attempt to determine the relationship between device efficiency and ...
High resistive edge termination technique obtained by ion implantation is a possible solution for GaN Schottky barrier diodes (SBD), but may induce defects detrimental to the devices. In this work, two sets of GaN SBDs, with or without a high resistive guard ring edge termination, were ...
A hysteresis phenomenon has been observed in the C-V spectra by sweeping the gate voltage Vgs forth and back between 5 and 0V. This parasitic effect has identified to be related to trapping and detrapping mechanisms occurring in the GaN-HEMT device. DLTS results have proved the presence of ...
12、int defects in SiGe expitaxial layers and Bulk Crystals 17th International Conference on Defects in Semiconductors, Gmunden July 18-23 1993 InPWalters, R. J. and Summers, G.P. Deep Level Transient Spectroscopy Studies of Proton inrradiatedp-type InP J. Appl. Phy. 69 (9), 6488, 1991...