Among all the topological materials, we advocate for the indispensability of Chern insulators exhibiting higher Chern numbers to achieve functional devices and uphold the no-dissipation rule simultaneously. Furthermore, we design the topological current divider and collector, evading dissipation upon ...
Based on this principle, we have improved the design of various topological devices and eliminated the bulk dissipation. 主讲人简介: 谢心澄 院士 谢心澄,中国科学院院士,发展中国家科学院院士,美国物理学会会士,北京大学讲席教授/复旦...
buildingfunctionallogicandstoragedevices[1].The creation,manipulationandtransportofspincurrentsis acentralchallengeinthisfield.Recently,Murakami, NagaosaandZhang[2]foundabasiclawofspintronics, whichrelatesthespincurrentandtheelectricfieldby theresponseequation j i j =σ s ǫ ijk E k (1) wherej i...
In analogy to photonic topological in-sulators, the emergence of exotic topological states inquantum systems, characterized by localized edge statesand interface states, demonstrates intriguing optical re-sponse and has motivated the development of functionalquantum devices with robustness against the ...
Investigation of SGS alloys CoNbMnZ (Z=As, Sb) suitable for dissipationless spintronic devices and thermoelectric technologyspin gapless behaviorspin polarizationspintronicsthermoelectric and mechanical stabilityThe current study examines two quaternary Heusler alloys, CoNbMnZ (Z = As, Sb). The ...
It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy dispersion are unique materials that can realize these ...
While microscopic laws of physics are invariant under the reversal of the\narrow of time, the transport of energy and information in most devices is an\nirreversible process. It is this irreversibility that leads to intrinsic\ndissipations in electronic devices and limits the possibility of quantum...
We study the dissipationless transport properties of chiral edge state (CES) in the Chern insulator MnBi2Te4 devices. A near-zero longitudinal resistance and a quantized Hall plateau 0.97h/e2 up to 22 K are observed. The CES shows three regimes of temperature dependence, i.e., well-...
It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that, the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped ...
Principles found here could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation. [References: 28]Murakami SNagaosa NZhang SCScience...