Saint-James, Direct calculation of the tunneling current, J. Phys. C: Solid State Phys. 4 (1971) 916.C. Caroli, R. Combescot, P. Nozieres, and D. Saint-James. Direct calculation of the tunneling current. J. Phys. C, 4(8):916, 1971....
Direct calculation of tunnelling current : Electron- phonon interaction effects. J. of Phys. C, 5(1):21-&, 1972.C. Caroli, R. Combescot, P. Nozieres, and D. Saint-James, "A direct calculation of the tunneling current: Iv... C Caroli,R Combescot,P Nozieres,... - 《Journal of ...
select article Indium dopant-induced morphological and optical properties of tin-antimony sulfide thin films synthesized by the spin coating method compared with ab initio calculation Short communicationAbstract only Indium dopant-induced morphological and optical properties of tin-antimony sulfide thin films...
Meanwhile, theoretical calculation of ΔG(H2O*) indicate that the adsorption energy in Ni3S4 is much closer to the IrO2 than other nickel sulfides, which are in good agreement with the OER performance of electrochemical measurements. select article New insight into the mechanism of LiPO2F2 on ...
Inelastic quantum mechanical tunneling of electrons across plasmonic tunnel junctions can lead to surface plasmon polariton (SPP) and photon emission. So far, the optical properties of such junctions have been controlled by changing the shape, or the type of the material, of the electrodes, primaril...
The redox reaction pathway of silver nanocluster formation in the polyol method is investigated by density functional theory calculation. It is suggested t... S Okumoto,Y Kitagawa - 《Chemistry Letters》 被引量: 0发表: 2021年 Concerted Bimetallic Nanocluster Synthesis and Encapsulation via Induced Ze...
Selberherr: „On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices", Institute for Microelectronics, Vienna, 2004.A. Gehring and S. Selberherr, "On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices," in Proc...
We have z=2ħωc/t⊥<<1 for B≤8 T and |U|≈Eg (gap energy) when the interlayer bias U<t⊥. The fitting results of experimental data to equation (1) are shown in Fig. 2 and Supplementary Fig. 2. Calculation of the topological edge states in the AB–BA domain walls To ...
A simplified integration technique for direct band-to-band tunneling current calculation in semiconductor devices of 1- or 2-D general device structures is described. The integration, along part of the depletion region, is of a tunneling generation function which depends on the local electric field...
To obtain the practical Esurf, an accurate calculation of the reverse leakage current is necessary. As discussed in our previous work (Li et al., 2020a), a numerical reverse leakage model is found to be most accurate, since it includes both the image-force lowering (IFL) and the doping ...