英[ˈdaɪəʊd] n.(电子)二极管 网络二极体;二级管;普通二极管 复数:diodes 权威英汉双解 英汉 英英 网络释义 diode n. 1. (电子)二极管an electronic device in which the electric current passes in one direction only, for example a silicon chip...
In the circuit,diodeD1 begins conducting at 30° when the R phase voltage is at its peak. Diode D1 stops at 150°, and diode D3 takes over when the Y phase voltage peaks. Diode D1 conducts from 30° to 150° during the positive cycle, assisted by diode D6, which completes the r...
An analysis of the forward current‐voltage data for a temperature range of 77.2° to 423°K on a Cr–Si (ND= 7 × 1018cm−3) Schottky barrier diode is given. TheI‐Vbehavior of such a diode, which obviously does not follow the simple Schottky theory, is not explained by the more...
When you select Use parameters IS and N for the Parameterization parameter, you specify the diode in terms of the Saturation current IS and Emission coefficient N parameters. When you select Use two I-V curve data points for the Parameterization parameter, you specify two voltage and current mea...
High Voltage and Current Ratings: With a maximum forward voltage of V and a maximum forward current of A, this diode can handle high voltage and current requirements, making it suitable for a wide range of applications. US Origin and Brand Neutrality: Manufactured in the US (11032), the PZ...
Surface mount switchingdiode. Reverse voltage 75 V. Rectified current 250 mA. 表面贴装开关二极管. 75五,反向电压整流电流250毫安. 期刊摘选 Thediodeis used in antistatic circuit manufactured through film transistor process. 此二极管用于采用薄膜晶体管工艺的静电放电防护电路. ...
(at the gate of ) decreases as diode starts to conduct, which is the same reason why voltage loop gain simultaneously increases, now that starts to short circuit and close the voltag 在current-voltage区域、电流线圈获取减退和它的带宽增量,因为它的获取和带宽设置抵抗(在门)减退作为二极管开始举办,...
Current-Voltage Equations These equations define the relationship between the diode current, Id, and the diode voltage, Vd. As applicable, the model parameters are first adjusted for temperature. For more information, see Temperature Dependence. Id=AREA∗(Ifwd−Irev) Ifwd=Inrm∗Kinj+Irec∗...
HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF A high-voltage semiconductor device capable of preventing a substrate current from forming is disclosed. The method of manufacturing the high-voltage semiconductor device comprises forming a well in a semiconductor substrate, forming a ...
DC/AC Voltage (V):6mv-600V; AC/DC Current (a):6000ua/60mA/600mA; Counts:2000; Diode Test:Yes; Capacitance:Yes; Resistance:Yes; Ncv:Yes; Backlight:Yes; Flash Light:Yes; Data Hold:Yes; Warranty:1 Years; Warranty:2 Year;