If one silicon diode and one germanium diode are connected in series, the voltage drop across the combination of the two diodes will be equal to ( ).相关知识点: 试题来源: 解析 the forward drop equal to that of the sum of the voltage drops across the two diodes ...
A. the forward drop equal to that of the difference of the voltage drops across the two diodes B. the forward drop equal to that of the germanium diode C. the forward drop equal to that of the silicon diode D. the forward drop equal to that of the sum of the voltage drops across ...
In one illustrative embodiment, the diode includes an anode comprising a P-doped silicon germanium material formed in a semiconducting substrate, an N-doped silicon cathode formed in the semiconducting substrate, a first conductive contact that is conductively coupled to the anode and a second ...
Germanium and silicon are common materials. Some of these detectors sense position as well as energy. They have a finite life, especially when detecting heavy particles, because of radiation damage. Silicon and germanium are quite different in their ability to convert gamma rays to electron showers...
A diode is an electronic device made of semiconductor materials (silicon, selenium, germanium, etc.). It has unidirectional conductivity, that is, when a forward voltage is applied to the anode and cathode of the diode, the diode conducts. When a reverse voltage is applied to the anode and...
Silicon and germanium semiconductor diodes For designing the diodes, silicon is more preferred over germanium. The p-n junction diodes made from silicon semiconductors works at high temperature than the germanium semiconductor diodes. Forward bias voltage for silicon semiconductor diode is approximately ...
Silicon photonics is one of the promising technologies for high speed optical fiber communications [1]. Among various silicon photonic devices, germanium on silicon avalanche photodiodes (Ge/Si APDs) have attracted tremendous attention due to their theoretical better performance than traditional III-V AP...
Here we report a CMOS-compatible, high-performing germanium–silicon SPAD operated at room temperature, featuring a noise-equivalent power improvement over the previous Ge-based SPADs22,23,24,25,26,27,28 by 2–3.5 orders of magnitude. Key parameters such as dark count rate, single-photon ...
developed a diode using Germanium crystal that produced electricity in response to light. It was facilitating the conversion of solar energy to electricity. It was found that the silicon piece that was cut has a large amount of impurity. The area where the impurity joined the silicon was termed...
There are disclosed herein various implementations of a photodiode including a silicon substrate, and an N type germanium region situated over the silicon substrate, the N type germanium region being a cathode of the photodiode. In addition, the photodiode includes a P type germanium region situat...