Picosecond Diode Lasers, Pico-LDs, are designed and manufactured by CrystaLaser. The lasers produce <80 ps short laser pulses with peak powers as high as 3 W. The Pico-LDs are cover the wavelength ranging from 375 nm to 1650 nm. Our picosecond diode laser system includes picosecond diode la...
In order to realize the GaAs laser diode wavelength of 940nm, since its transition energy is about 1.319eV, which is much smaller than the band gap of GaAs, the usual matching GaAs/AlGaAs (λ=0.7-0.9um) and InGaAsP/InP (λ=1.1-1.65um) is difficult to achieve. The emission wavelength o...
The stimulated emissions from semipolar InGaN laser diode (LD) structures grown on ( 11 2 2 ) GaN substrates are observed at room temperature under photopumped conditions. The measured emission peaks are in the photon energy range from 2.62 eV (474 nm ) to 3.05 eV (405 nm ) , and the...
Laser system B based on device B is tunable from 666 to 685nm. As high as 1.05W output power is obtained around 675.67 nm. The emission spectral bandwidth is less than 0.07nm throughout the tuning range, and the beam quality factor M(2) is 1.13 at an output power of 0.93W. Laser ...
the latter being the more popular. In fact, very few dispersion instruments are sold today but many are still used in the field and so their characteristics will be discussed. All multichannel detectors require a broad emission light source such as deuterium or the xenon lamp, the deuterium lam...
Its 2.7-μm emission property is analyzed, and the efficient 2.7-μm emission from the glass is observed under 980-nm laser diode excitation. The prepared glass possesses high spontaneous transition probability (64.8 s 1 ) and a large calculated emission cross section (6.61×10 21 cm 2 ) ...
Package:3535, 3838(3939)7070,TO46, package;Color:Infrared IR;Package Type:Surface Mount Package Type;Type:IR laser VCSEL diode;Power:1W 2W 3W 4W 5W 12W;Type:SMD LED;Warranty(Year):2-Year;Lighting solutions service:Other;Place of Origin:CN;GUA;Color Tempe
High-Intensity Emission: This VCSEL 808nm Diode Laser Chip features a luminous intensity of 500mw, making it suitable for various applications such as LED lamps. It has a luminous flux of 100,000lm, ensuring a bright and vibrant light output. Wide Operating Temperature Range: The product has...
346 nm Emission from AlGaN Multi‐Quantum‐Well Light Emitting Diodedoi:10.1002/(SICI)1521-396X(199911)176:13.0.CO;2-0T. NishidaN. KobayashiNTT Basic Research Laboratories, 3‐1, Morinosato‐wakamiya, Atsugi‐shi, Kanagawa Pref., 243‐0198, Japan...
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light-emitting diodes perfectly suited to applications across a wide number of fields, whether biological, environmental,...