ESD Protection Diode Micro−Packaged Diodes for ESD Protection ESDM3033 The ESDM3033 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these...
esd protection diode原理esd protection diode原理 其工作原理基于二极管的单向导电性。能在极短时间内导通,将静电电流引导到地。这种二极管具有低电容特性,减少对信号传输的干扰。可承受高电流脉冲而不损坏。利用反向击穿特性来实现 ESD 保护。当静电电压超过阈值,立即进入导通状态。通常采用特殊的半导体工艺制造。具有...
至少一个阳极(148)区域和多个阴极区域中的相邻的一个接触. At least one anode (148) a plurality of cathode contact region and adjacent regions.石甫渊苏根政CN1524298A * May 22, 2002 Aug 25, 2004 通用半导体公司 DMOS with zener diode for ESD protection...
ESD11B ESD Protection Diode Micro−Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of ...
Micro −Packaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is ...
Generally, the diodes that are used for ESD protection are inserted between ground and an I/O line that could be exposed to ESD. The following summarizes the characteristics required for these diodes: ESD protection diodes should neither conduct in normal operation nor affect th...
ESD Protection Diode 特征: 低钳位电压; 高速数据线瞬间稳态保护; 针对高速线路优化的封装; 保护一个数据、控制器或电源线; 低漏电流:1nA @VRWM(典型值); 超小型封装(0.6mm x 0.3mm x 0.3mm); 每个I/O引脚可承受超过1000次ESD冲击,用于±8KV接触放电....
Novel PMOS-bound and NMOS-bound diodes for ESD protection, together with their application circuits, are disclosed in this invention. The PMOS-bound (or NMOS bound) diode has a PMOS (or an NMOS) structure. The source/drain region enclosed by the control gate of the PMOS (or NMOS) is ...
Large electrostatic discharge (ESD) protection devices close to the I/O pins, beneficial for ESD protection, have an adverse effect on the performance of b... MD Ker,BJ Kuo,YW Hsiao - 《Journal of Electrostatics》 被引量: 38发表: 2006年 Design and optimization of DTSCR for high-speed I...
Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna ...