The voltage of CSL is shielded by a buried p-type layer (P-bury) whose potential is clamped by a p-type Schottky Barrier Diode (pSBD) in series-connection with a PN diode. Hence, the CSL can be heavily doped, and the trade-off between on-state voltage drop ( V on ) and turn-...
SiC trench IGBT with diode-clamped p-shield for oxide protection and enhanced conductivity modulation. In Proceedings of the IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, USA, 13–17 May 2018; pp. 411–414. [Google Scholar] Wei, J.; Zhang, ...