gate 【后缀】表示"政治丑闻"(因Watergate水门事件而造) Irangate 伊朗门事件(美国销售军火给伊朗的一连串非法事件) circuit n. 1.环行,环行路线 2.电路,线路 3.巡回赛 4.赛车道 5.巡回,巡游 6.(法官的)巡回审判 in gate 【计】 输入门 semiconductor diode 【电】 半导体二极管 diode pentode 【电...
gate controlled diode 闸控二极管 diode OR gate 二极管或门 diode AND gate 二极管与门 diode gate 二极管符合线路,二极管门电路 gate diode 门二极管 diode gate circuit 二极管门电路 diode NAND gate 二极管非与门 diode gate network 二极管与门网络 diode NOR gate 二极管或非门 相似...
PROBLEM TO BE SOLVED: To control the reverse blocking voltage of a clamp diode which is connected in parallel between the source and the gate of an n-channel type MOSFET on the high side of a totempole-type output circuit to about 7.5V and to prevent the dielectric breakdown of a gate ...
摘要: Presents a study that examined circuit simulator models for the diode and insulated gate bipolar transistor (IGBT) with full temperature dependent features. Simulation of the distributed charge; Results of the study; Conclusion.年份: 2003 ...
(i.e., resistor or zener diode) are\nneeded in a circuit design to form an electronic circuit with specific functions, these circuit elements need\nto... - 《Electronics Newsweekly》 被引量: 0发表: 2022年 BIDIRECTIONAL ZENER DIODE AND METHOD FOR MANUFACTURING THE SAME PROBLEM TO BE SOLVED...
diode-transistor logic circuit 【计】 二级管-晶体管逻辑电路相关短语 barrier capacity (晶体管的) 阻挡层电容 graded base (晶体管的) 缓变基区 maximum junction temperature (晶体管的) 最大结温度 source and drain junction(场效应晶体管的) 源漏结 logic swing (逻辑1与0之间的电压差) 逻辑幅度 herapat...
When no gate voltage is applied, the contribution to charge transport via the small common central region can be neglected compared to the dominant transport via the legs of the Y-shaped junction, as illustrated in Fig. 1c. A simplified model for the device can then be a circuit with three...
high-speed synthesized thyristor, using discrete components: a MOSFET in series with a high-voltage (HV) diode and a logic circuit that controls its ... M Cousineau,R Diez,H Piquet,... - 《IEEE Transactions on Industrial Electronics》 ...
However, the design of the gate-driver power-supply for the multiple controlled semiconductor devices remains an important issue to be addressed. This paper focuses on the design of such circuits and the analysis of the resulting multilevel converter performance. A simple circuit connected across ...
An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been rea...