From McGarrity [33], the total dose can be converted to the density of oxide trapped charge near the interface using the formula, Noe = Dt0XG F (2-2) where D is the total dose, tox is the oxide thickness, G is the generation rate of electron-hole pairs per unit volume, and F ...
The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in semiconductors with weak spin-orbit coupling (SOC). However, it remains un...
To push the limits of detection, arrays of a large number of sensing elements (up to 440,000) are patterned with a geometry that improves sensitivity and in a configuration that reduces the resistance, leading to a lower noise level. The final device performance with pT detectivity is ...
Three-dimensional superconductivity and vortex glass transition in Formula Not ShownLee, H. S.Kim, H. J.Kim, H. J.Jung, M. H.Jo, Y.Lee, S. I.Tsukada, A.Naito, M.PHYSICA B
resistance, and so on, so it is widely studied in the field of catalysis. And h-BN as a carrier, a variety of inorganic materials for composite has also achieved more research results.[23]The boron–carbon–nitrogen(BCN)layered material can be regarded as a mixture of graphite and BN....
(cohesive energy per atom) of bulk Li, OCV is the average open-circuit voltage of maximum number of Li-adsorbed 2D material, xmin = 0 is the amount of Li per formula unit of 2D material in initial pristine form, xmax is the maximum amount of Li per formula unit the material can ...
where 𝜅=𝑙/𝑆κ=l/S, 𝜅κ is geometric coefficient of resistance; 𝑙l is thickness of conductive composite, 𝑆S is cross-sectional area, 𝜌𝑚ρm is the resistivity of conductive silicon. When the applied stress is between 0 and 2 MPa, the change of Poisson’s ratio 𝜐υ...
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In this way, one can account for a nite subgap resistance due to inelastic (phase-breaking) scattering1.In contrast, a derivation of the e ective action (1) of a junction between two gapless d-wave (as well as any l = 0-wave) superconductors along the same lines manifests its non-...
TMDs are a new star in the post-graphene era, which are composed of a transition metal and two chalcogens. The general stoichiometric formula of TMDs is MX2, where M and X denoted the transition metal (Ti, V, Ta, Mo, W, Re, etc.) and chalcogen (S, Se, Te, etc.), respectively...