Until this date multi-element models have been developed based on device physics to predict SOA of CE Si-BJT beyond BVCEO under variable drive conditions [2], [3]. This paper takes a circuit plus device approach to develop a single analytic relation to model the variable latching phenom...
Theoretical Formalism of VARIABLE LATCHING PHENOMENA in different configurations of CURRENT SOURCES using CE BJT-2N3055 Theoretical Formalism of VARIABLE LATCHING PHENOMENA in different configurations of CURRENT SOURCES using CE BJT-2N3055Quest for TerraHertz SiGe HBT has led ... BK Sharma 被引量: 0...