When surface plasmons exist, the real part of the metal dielectric constant must be negative and its magnitude must be greater than that of the dielectric. This condition is satisfied in the wavelengths range of IR-visible lights for air/metal and water/metal interfaces, where the real part ...
dielectric constantmicrowave smeltingabsorbing performancereflection lossThe dielectric properties and electromagnetic wave absorbing performance of granular polysilicon have important influences on microwave smelting efficiency. In this study, the dielectric parameters (dielectric constant, dielectric loss factor and...
A method for forming a dielectric-constant-enhanced capacitor includes depositing a silicon nitride layer on polysilicon layer first, then a dielectric-constant-enhanced Tantalum-oxide-based film is deposited next, and a metal layer is deposited last. The dielectric-constant-enhanced film is produced...
摘要：A method for forming a dielectric-constant-enhanced capacitor includes depositing a silicon nitride layer on polysilicon layer first, then a dielectric-constant-enhanced Tantalum-oxide-based film is deposited next, and a metal layer is deposited last. The dielectric-constant-enhanced film is ...
Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods ...
Still, the materials are promising in a gate last process as well as show potential as complementary gate electrodes.The dielectric constant of as-deposited (Ta2O5)1-x(TiO2)x thin films is around 22, whereas that of AlN is about 10. The latter is not dependent on the degree of ...
whereqis the elementary charge,kis Boltzmann’s constant,Tis the absolute temperature, andNtis the total trap density. The red line inFig. 3.2G is the square root ofIDin thesaturation regime, which is frequently used for extracting mobility from its slope. However, this slope is actually a ...
9. The method for forming a semiconductor device as claimed in claim 1, wherein the crystalline gate dielectric layer has a dielectric constant higher than that of the nitride buffer layer. 10. The method for forming a semiconductor device as claimed in claim 1, wherein the crystalline gate...
The dependence of bird's beak length on process parameters has been studied for selective polysilicon oxidation. The gate oxide thinning at the field oxide edge is correlated with the voltage drop across the gate oxide for constant current stress. We show, that with an optimised set of process...
The insulator features alternating contact cavities and air dielectric cavities. The air dielectric cavities reduce the effective dielectric constant of the connector, which allows high-speed data to be transmitted while maintaining impedance, thereby preserving signal fidelity....