plasmaresonanceIn a previous paper (J. Electron. Control 10: 207(1961)), an elastic restoring force was used in the equation of motion for the electron in order to take account of plasma resonance effects. It is shown that this force was based on experimental evidence. The justification of...
The dielectric constant of a material is a measure of the degree to which a material may be electrically polarized such that it may cancel an applied electric field. From: Encyclopedia of Materials: Science and Technology, 2001 About this pageSet alert Also in subject areas: Biochemistry, Geneti...
The microstructure, thermal conductivity and dielectric constant of SPS AlN samples are examined. Results show that SPS can fabricate samples with superior thermal properties. Addition of 1 wt.% CaF 2 was found to have expedited the sintering process and this yielded thermal conductivity of 110 W ...
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the o
The value of dielectric constant and dielectric strength of this polymer gives a remarkable importance in the field of capacitors. Introduction Plasma polymerization is one of the famous and novel methods to prepare pinhole free, highly resistive, chemically inert polymer thin films of few angstroms ...
Plasma deposition of low dielectric constant (k = 2.2~2.4) boron nitride on methylsilsesquioxane-based nanoporous films. J. Appl. Phys. 96, 6679–6684 (2004). Article ADS CAS Google Scholar Glavin, N. R. et al. Amorphous boron nitride: a universal, ultrathin dielectric for 2D ...
Electric field and surface charge measurements are presented to understand the dynamics in the plasma–surface interaction of a plasma jet and a dielectric surface. The ITO coated backside of the dielectric allowed to impose a DC bias and thus compare th
Effect of annealing on dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition Polycrystalline boron carbon nitride (BCN) films are synthesized by plasma-assisted chemical vapor deposition. The dielectric constant is estimated from th......
1. Field of the Invention Embodiments of the present invention generally relate to methods for repairing and lowering the dielectric constant of low k films for semiconductor fabrication. 2. Description of the Related Art The dielectric constant (k) of dielectric films in semiconductor fabrication is...
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized