A.: Dielectric-Constant Gas-Thermometry Measuring System for the Determination of the Boltzmann Constant at PTB, Int. J. Thermo- phys. 31, 1371-1385, 2010Zandt, T. u. A.: Dielectric-Constant Gas-Thermometry Measuring System for the Determination of the Boltzmann Constant at PTB, Int. J. ...
Plasma deposition of low dielectric constant (k = 2.2~2.4) boron nitride on methylsilsesquioxane-based nanoporous films. J. Appl. Phys. 96, 6679–6684 (2004). Article ADS CAS Google Scholar Glavin, N. R. et al. Amorphous boron nitride: a universal, ultrathin dielectric for 2D ...
This is conventionally called the Meek–Raether criterion. Although diffusion is central to Meek’s mechanism, the diffusion constant does not feature in the numerical result, since it is eliminated in later stages of the derivation via use of the Einstein relation. Bazelyan and Raizer subsequently...
ON THE DIELECTRIC CONSTANT OF THE HIGH-DENSITY CHARGED BOSE GAS AND THE VALIDITY OF THE BOHM–PINES ASSUMPTIONn* --physics--atomic & molecular physics--atomic & molecular propertiesbosonsdensitydielectricselectric chargesgasesNot Availabledoi:10.1139/p67-172...
And the configurational entropy (ΔSconfig) can be defined by the Boltzmann’s entropy equation[7], [8]:(1)ΔSconfig=−R∑i=1NxilnxiWhere R represents the universal gas constant (8.314 J/mol⋅K) and xi denotes the molar content of the ith element, adjustments in the relative ...
Table 1. The values of crystalline size (D), lattice constant (a), unit cell volume (V), X-ray density (dx), Bulk density (dB)and percentages porosity (%P) for the synthesized CoxZn(0.90-x)Al0.10Fe2O4 samples. Co Concentration (%)D (nm)a (Å)V (Å3)dx (gm/cm3)dB (gm/...
The present invention generally provides a method for depositing a low dielectric constant film. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at...
Shirafuji et al., Plasma copolymerization of tetrafluoroethylene/hexamethyldisiloxane and In Situ Fourier Transform infrared spectroscopy of its gas phase, Jpn. J. Appl. Phys. vol. 38 (1999) pp. 4520-4526. Sugahara et al., Low Dielectric constant carbon containing SiO2 films deposited by PECVD...
relates to high dielectric constant type ceramic compositions, more particularly to low-temperature sintering type ceramic compositions which are suitable for multilayer capacitors having a high dielectric constant and which can be synthesized by a solid phase reaction of a composite material of oxides. ...
A method for fabricating a low dielectric constant printed circuit board includes dispersing an additive material in a low dielectric constant porous polymer layer; providing holes through the low die