When 1012 cm−2, 2DHG formation with an equivalent hole density near the interface in C-H diamond satisfies the charge neutrality condition. Using region), a tCh-eHhidgihamteomnpdemraetutarleo(x4i5d0e °sCem) AicLoDndAulc2tOor3 as gate (MOS) oxide and passivation of gate-drain ...