PURPOSE: A storage node pattern of a semiconductor device is provided to be capable of enhancing the cell capacitance by shifting the storage node pattern to increase the length of major axis of the storage node pattern. CONSTITUTION: A storage node pattern(31) is arranged by matrix shape on ...
PURPOSE: A test pattern of semiconductor device is provided to precisely measure a junction leakage current of a storage node electrode and a substrate by using a predetermined storage under plate. CONSTITUTION: A semiconductor substrate(1) is separated into respective dies(10) by scribe lines(11)...
The testosterone Lodge node pattern forming method for a semiconductor device is disclosed. Testosterone lodge to form an oxide film as an insulating film on the substrate having the node contact pad, a polysilicon film are sequentially as a hard mask. Then, the hard mask is etched membrane to...
The method for forming the lower electrode pattern of a semiconductor device is disclosed. The lower electrode contact pad structure the etch stop film and the interlayer insulating film having a film and to form a hard mask pattern for exposing the surface of the interlayer insulating film ...
PURPOSE: A test pattern of semiconductor device is provided to precisely measure a junction leakage current of a storage node electrode and a substrate by using a predetermined storage under plate. CONSTITUTION: A semiconductor substrate(1) is separated into respective dies(10) by scribe lines(11)...
PATTERN FORMATION METHOD OF A SEMICONDUCTOR DEVICE TO FORM A HOLE PATTERN SUCH AS A STORAGE NODE OF A CAPACITORPURPOSE: A pattern formation method of a semiconductor device is provided to secure a DOF margin at the edge of a cell by forming a hole pattern using a high transmittance mask.;...