CONSTITUTION:At a write time, when transistor 6 is turned off, capacitors 4 and 5 at the output end of differential amplifier 1 have a potential lower or higher than the operating center voltage of differential amplification-type level converter 13 by a prescribed value due to resistances 14 ...
signal line; and the current amplifying circuit performs current amplification processing on the electrical signal at the second node and writes it to a ... L Duan 被引量: 0发表: 2020年 HEATER CHIP TEST CIRCUIT AND METHODS FOR USING THE SAME circuit when the test device receives a signal ...
, when a memory cell is selected, data stored in the memory cell is transmitted to one of bit lines BL and ZBL, and the other bit line maintains the precharge voltage level and is used as a reference bit line supplying a reference potential at the time of the differential amplification....
One-pass programming in a multi-level nonvolatile memory device with improved write amplificationA method for data storage includes preparing first data having a first size for storage in a memory device that stores data having a nominal size larger than the first size, by programming a group ...
One-pass programming in a multi-level nonvolatile memory device with improved write amplificationA method for data storage includes preparing first data having a first size for storage in a memory device that stores data having a nominal size larger than the first size, by programming a group ...
One-pass programming in a multi-level nonvolatile memory device with improved write amplificationA method for data storage includes preparing first data having a first size for storage in a memory device that stores data having a nominal size larger than the first size, by programming a group ...
MULTIPLE LEVEL NAND MEMORY DEVICE AND NON-ERASURE REPROGRAMMING METHOD USING CAPACITY OF MULTIPLE LEVEL NAND MEMORY CELLPROBLEM TO BE SOLVED: To reduce write time, write amplification, and erasure/reading/write cycles by executing a plurality of reprogramming operations by an NAND memory cell without...
The controller at the device end uses the HMB to buffer write data issued by the host, and then flushes the write data from the HMB to multi-level cells of the non-volatile memory without passing single level cells of the non-volatile memory to reduce write amplification problems due to ...