Constant aggressive scaling of CMOS is no more beneficial for VLSI industry because it causing various short channel effects as CMOS transistor scaled down below the 16nm. To eliminate these drawback of CMOS, r
具有3大显著优势:一是性能高端,不管DDR、SerDes还是Chiplet,性能优异,覆盖全面,满足接口产品需求;二是高端工艺验证,主流先进工艺都已开发验证完成并授权客户量产,包括12nm/10nm/8nm/7nm/6nm/5nm/3nm等,是全球两大5nm先进工艺共同认证的官方技术合作伙伴;三是跨平台,保证生产安全,芯动拥有累计流片200次以上的验证经...
2018年6月 26 --eSilicon是一个专注于FinFET级ASIC设计,特定市场IP平台的开发和先进2.5D封装解决方案的ASIC芯片供应商。2018年6月 26 日eSilicon刚刚宣布推出一套完整的基于7nm工艺的可高度配置的IP平台,该平台主要专注于网络和数据中心两个应用的芯片市场。 对于系统OEM厂商来说,能拥有满足功耗,性能和密度等所有...
providing a further reduced leakage solution [24]. A FinFET-based power-gated nine-transistor (PG9T) cell design in [25] combines all the benefits above. Integrating the modern cell design with the SCA-resistant methodology, we can achieve the security goals and better SRAM performance simultan...
Molex and Credo to Demonstrate 50 Gbps NRZ live serial traffic at DesignCon 2015 Jan. 23, 2015 Credo Conducts First Public Demonstrations of 28G and 56G NRZ SerDes Technology Jan. 21, 2015 Credo Tapes Out Industry-leading Serdes IP on 16-nm FinFET+ Process Nov. 19, 2014 Credo...
Silicon-proven DesignWare PHY IP on TSMC's 7nm FinFET process includes USB, DDR, LPDDR, HBM, PCI Express, MIPI, DisplayPort, and Ethernet Successful customer tapeouts of DesignWare Logic Libraries and Embedded Memories on 7nm demonstrate high quality and reduce int...
In layout design, a unique multi-grid system abstracts complex design rules of the latest 7nm and 5nm processes, while allowing engineers to increase their use of placement and routing technologies to significantly increase layout design productivity. Using these techniques with the enhancements made ...
Design/technology co-optimization (DTCO) is used to feed the impact of those decisions on the resulting designs back n Corresponding author. E-mail address: Lawrence.clark@asu.edu (L.T. Clark). into the technology decision making process [4–7]. It is increas- ingly important as finFET ...
In order to understand a lot of what Intel is doing at 10nm, we need to discuss fin, gate, and cell mechanics as well as define some terms relating to transistors and FinFETs. Starting with a diagram of a traditional FinFET: The source-to-drain of a transistor is provided by a fin ...
Side-Channel Attack Resilient Design of a 10T SRAM Cell in 7nm FinFET Technologydoi:10.1109/MWSCAS.2019.8884824Writing,Transistors,SRAM cells,Computer architecture,Microprocessors,Power demandThe non-invasive Side-Channel Attacks (SCA) for integrated circuits have been a concern for many years and ...