DE-MOSFET can be operated either with positive or negative gate, so its operating or quiescent point can be set at VGS= 0 V, as illustrated in Fig. 13.72(b). In Fig. 13.72(a) the gate G is at ground potential for dc since ac signal source appears to be short circuited for dc and...
Subthreshold Region: MOSFET in Weak Inversion When the surface potential at the source end is sufficient to form an inversion layer but the band bending is less than what is needed to reach strong inversion (i.e., ϕF < Ψs < 2ϕF), the MOSFET is said to operate in weak inversion...
The utility model relates to an anti-radiation MOS component structure based on part-depletion type SOI (silicon-on-insulator) process, comprising an SOI substrate, wherein the SOI substrate includes a silicon film; the upper part of the silicon film is sculptured with a groove; a first isolat...